ECH8659-TL-H ON Semiconductor, ECH8659-TL-H Datasheet
ECH8659-TL-H
Specifications of ECH8659-TL-H
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ECH8659-TL-H Summary of contents
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... To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN ECH8659 SANYO Semiconductors N-Channel Silicon MOSFET General-Purpose Switching Device ...
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... Switching Time Test Circuit V DD =15V V IN 10V =3. =4.3Ω D PW=10μs D.C.≤1% G ECH8659 P.G 50Ω S ECH8659 Symbol Conditions R DS (on =3.5A =10V R DS (on =2A =4. (on =2A =4V Ciss V DS =10V, f=1MHz Coss V DS =10V, f=1MHz Crss V DS =10V, f=1MHz t d (on) See specified Test Circuit ...
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... Drain-to-Source Voltage (on = Gate-to-Source Voltage ⏐ fs⏐ 1 0 0.01 0.1 1.0 Drain Current Time -- I D 100 (on 0.1 1.0 Drain Current ECH8659 0.8 1.0 0 0.5 IT13723 70 Ta=25 ° --60 --40 IT13725 =10V 1 0 0.01 0 IT13727 2 1000 100 =15V ...
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... Ambient Temperature °C Note on usage : Since the ECH8659 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co ...