ECH8659-TL-H ON Semiconductor, ECH8659-TL-H Datasheet - Page 2

• Manufacturer Part Number: ECH8659-TL-H
• Description: MOSFET N-CH DUAL 30V 7A ECH8
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of ECH8659-TL-H

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: -
• Gate Charge (qg) @ Vgs: 11.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 710pF @ 10V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SMD
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Continued from preceding page.
Package Dimensions
unit : mm (typ)
7011A-001
Switching Time Test Circuit
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
P.G
10V
0V
PW=10μs
D.C.≤1%
V IN
1
8
0.65
Parameter
Bottom View
Top View
V IN
2.9
50Ω
G
5
4
0.3
V DD =15V
D
S
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : ECH8
I D =3.5A
R L =4.3Ω
0.15
ECH8659
R DS (on)1
R DS (on)2
R DS (on)3
V OUT
0 to 0.02
Symbol
t d (on)
t d (off)
Coss
Ciss
Crss
V SD
Qgs
Qgd
Qg
t r
t f
I D =3.5A, V GS =10V
I D =2A, V GS =4.5V
I D =2A, V GS =4V
V DS =10V, f=1MHz
V DS =10V, f=1MHz
V DS =10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
V DS =15V, V GS =10V, I D =3.5A
V DS =15V, V GS =10V, I D =3.5A
V DS =15V, V GS =10V, I D =3.5A
I S =7A, V GS =0V
ECH8659
Electrical Connection
Conditions
8
1
7
2
6
3
5
4
min
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
Top view
Ratings
typ
0.79
11.8
710
120
2.4
2.0
18
29
39
72
10
25
43
25
max
1.2
24
41
55
No. A1224-2/4
Unit
mΩ
mΩ
mΩ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V