BUJ103A NXP Semiconductors, BUJ103A Datasheet - Page 7

• Manufacturer Part Number: BUJ103A
• Description: Bipolar Power RAIL BIPOLAR
• Manufacturer: NXP Semiconductors

Specifications of BUJ103A

• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Package / Case: SOT-78
• Collector- Emitter Voltage Vceo Max: 400 V
• Maximum Dc Collector Current: 4 A
• Power Dissipation: 80000 mW
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 4 A
• Dc Collector/base Gain Hfe Min: 10
• Lead Free Status / Rohs Status: Details
• Other names: BUJ103A,127

Philips Semiconductors
9397 750 14604
Product data sheet
Fig 11. Base-emitter saturation voltage as a function of
Fig 13. Test circuit for reverse bias safe operating area
V
BEsat
(V)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10
I
collector current; typical values
V
L
C
B
CEclamp
/I
1
= 1 H; L
B
I
V
Bon
BB
= 4.
1000 V; V
C
= 200 H.
L
B
CC
1
= 150 V; V
L
V
C
CC
DUT
I
C
BB
(A)
V
probe point
CEclamp
= 5 V;
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001aab996
10
Rev. 03 — 3 March 2005
Fig 12. Collector-emitter saturation voltage as a
Fig 14. Reverse bias safe operating area
V
CEsat
(V)
(A)
I
C
0.5
0.4
0.3
0.2
0.1
10
0
8
6
4
2
0
10
I
function of collector current; typical values
T
C
0
j
/I
1
B
T
= 4.
j(max)
200
.
Silicon diffused power transistor
400
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
1
600
I
C
BUJ103A
(A)
800
V
CEclamp
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001aac000
1000
(V)
10
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