BUJ103A NXP Semiconductors, BUJ103A Datasheet
BUJ103A
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BUJ103A Summary of contents
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... BUJ103A Silicon diffused power transistor Rev. 03 — 3 March 2005 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT78 (TO-220AB) plastic package. 1.2 Features Low thermal resistance 1.3 Applications Electronic lighting ballasts Inverters 1.4 Quick reference data ...
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... Conditions open emitter open base see mb 120 P der (%) 100% Rev. 03 — 3 March 2005 BUJ103A Silicon diffused power transistor Min - - - - - - - Figure 001aab993 120 160 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Version ...
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... Fig 2. Transient thermal impedance from junction to mounting base as a function of pulse duration 9397 750 14604 Product data sheet Conditions see Figure 2 in free air Rev. 03 — 3 March 2005 BUJ103A Silicon diffused power transistor Min Typ Max - - 1. 001aab998 tot ...
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... mA see 500 Figure 5 and 2 Con Bon Boff Figure 7 and 0 Con Bon Figure 7 and 0 Con Bon 100 Rev. 03 — 3 March 2005 BUJ103A Silicon diffused power transistor Min Typ [ [ 125 [ [ 400 - Figure 10 - 0.25 Figure 11 - 0.97 Figure 12 0.52 - 2 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. ...
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... I Con Bon Fig 6. Switching times waveforms for resistive load Rev. 03 — 3 March 2005 Silicon diffused power transistor C sustaining voltage test waveform Boff © Koninklijke Philips Electronics N.V. 2005. All rights reserved. BUJ103A min V ( CEOsus 001aab988 I Con stg t off I Bon t 001aab990 ...
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... Product data sheet DUT 001aab991 = 200 Fig 8. Switching times waveforms for inductive load 001aab994 V CEsat ( (A) C Fig 10. Collector-emitter saturation voltage as a Rev. 03 — 3 March 2005 BUJ103A Silicon diffused power transistor Con stg t off Bon I Boff 2 1.6 1.2 ...
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... Fig 14. Reverse bias safe operating area Rev. 03 — 3 March 2005 Silicon diffused power transistor 0.5 0.4 0.3 0.2 0 function of collector current; typical values ( 200 400 600 j(max) © Koninklijke Philips Electronics N.V. 2005. All rights reserved. BUJ103A 001aab997 10 (A) 001aac000 800 1000 V (V) CEclamp ...
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... Fig 15. Forward bias safe operating area 7. Package information Epoxy meets requirements of UL94 V-0 at 9397 750 14604 Product data sheet duty cycle = 0.01 ( Newton force on the center of the envelope inch. 8 Rev. 03 — 3 March 2005 BUJ103A Silicon diffused power transistor 001aac001 ( 100 s 200 s (2) 500 s DC III (3) ...
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... TO-220AB SC-46 Rev. 03 — 3 March 2005 Silicon diffused power transistor mounting base ( max. 15.0 3.30 3.8 3.0 3.0 13.5 2.79 3.6 2.7 EUROPEAN PROJECTION © Koninklijke Philips Electronics N.V. 2005. All rights reserved. BUJ103A SOT78 Q 2.6 2.2 ISSUE DATE 01-02-16 03-01- ...
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... FE t and t data revised Product data sheet - Product data sheet - Rev. 03 — 3 March 2005 BUJ103A Silicon diffused power transistor Doc. number Supersedes 9397 750 14604 BUJ103A_HG_2 9397 750 04387 BUJ103A_1 - - © Koninklijke Philips Electronics N.V. 2005. All rights reserved ...
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... Rev. 03 — 3 March 2005 BUJ103A Silicon diffused power transistor © Koninklijke Philips Electronics N.V. 2005. All rights reserved ...
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... No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Published in The Netherlands BUJ103A Date of release: 3 March 2005 Document number: 9397 750 14604 ...