BUJ103A NXP Semiconductors, BUJ103A Datasheet - Page 4

• Manufacturer Part Number: BUJ103A
• Description: Bipolar Power RAIL BIPOLAR
• Manufacturer: NXP Semiconductors

Specifications of BUJ103A

• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Package / Case: SOT-78
• Collector- Emitter Voltage Vceo Max: 400 V
• Maximum Dc Collector Current: 4 A
• Power Dissipation: 80000 mW
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 4 A
• Dc Collector/base Gain Hfe Min: 10
• Lead Free Status / Rohs Status: Details
• Other names: BUJ103A,127

Philips Semiconductors
6. Characteristics
Table 5:
T
[1]
9397 750 14604
Product data sheet
Symbol
Static characteristics
I
I
I
I
V
V
V
h
h
Dynamic characteristics
Switching times (resistive load); see
t
t
t
Switching times (inductive load); see
t
t
Switching times (inductive load); see
t
t
CES
CBO
CEO
EBO
on
stg
f
stg
f
stg
f
mb
FE
FEsat
CEOsus
CEsat
BEsat
= 25 C; unless otherwise specified.
Measured with half sine-wave voltage (curve tracer).
Characteristics
Parameter
collector-emitter cut-off
current
collector-base cut-off current
collector-emitter cut-off
current
emitter-base cut-off current
collector-emitter sustaining
voltage
collector-emitter saturation
voltage
base-emitter saturation
voltage
DC current gain
DC saturation current gain
turn-on time
storage time
fall time
storage time
fall time
storage time
fall time
Figure 5
Figure 7
Figure 7
Conditions
V
V
V
V
V
I
see
I
I
I
I
I
I
I
R
I
V
I
V
and
B
C
C
C
C
C
C
Con
Con
Con
and
and
BE
BE
BE
CEO
EB
BB
BB
L
= 0 A; I
= 3.0 A; I
= 3.0 A; I
= 1 mA; V
= 500 mA; V
= 2.0 A; V
= 3.0 A; V
= 75
Figure 3
= 0 V; V
= 0 V; V
= 0 V; V
= 7 V; I
= 2.5 A; I
= 2 A; I
= 5 V
= 2 A; I
= 5 V; T
6
8
8
Rev. 03 — 3 March 2005
= V
CEOMmax
C
C
= 10 mA; L = 25 mH;
B
B
Bon
Bon
CE
CE
CE
CE
CE
CE
and
= 0 A
= 0.6 A; see
= 0.6 A; see
Bon
j
= 100 C
CE
= 0.4 A; L
= 0.4 A; L
= V
= V
= V
= 5 V; see
= 5 V
= 5 V
= I
4
= 5 V
= 400 V
CESMmax
CESMmax
CESMmax
Boff
= 0.5 A;
B
B
Figure 10
Figure 11
Figure 9
= 1 H;
= 1 H;
; T
j
= 125 C
Silicon diffused power transistor
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
[1]
[1]
[1]
[1]
Min
-
-
-
-
-
400
-
-
10
13
11
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
0.25
0.97
17
22
16
12.5
0.52
2.7
0.3
1.2
30
-
-
BUJ103A
Max
1
2
1
0.1
0.1
-
1
1.5
32
32
22
-
0.6
3.3
0.35
1.4
60
1.8
120
Unit
mA
mA
mA
mA
mA
V
V
V
ns
ns
s
s
s
s
s
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