BF998T NXP Semiconductors, BF998T Datasheet - Page 9

BF998T

Manufacturer Part Number
BF998T
Description
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BF998T

Application
VHF/UHF
Channel Type
N
Channel Mode
Depletion
Continuous Drain Current
0.03A
Drain Source Voltage (max)
12V
Noise Figure (max)
1(Typ)dB
Frequency (max)
1GHz
Package Type
SOT-143B
Pin Count
3 +Tab
Input Capacitance (typ)@vds
2.1@8V@Gate 1/1.2@8V@Gate 2pF
Output Capacitance (typ)@vds
1.05@8VpF
Reverse Capacitance (typ)
0.025@8VpF
Operating Temp Range
-65C to 150C
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
200mW
Screening Level
Military
Lead Free Status / Rohs Status
Compliant
NXP Semiconductors
1996 Aug 01
handbook, full pagewidth
Silicon N-channel dual-gate MOS-FETs
V
L1 = L4 = 200 nH; 11 turns 0.5 mm copper wire, without spacing, internal diameter 3 mm.
L2 = 2 cm, silvered 0.8 mm copper wire, 4 mm above ground plane.
L3 = 2 cm, silvered 0.5 mm copper wire, 4 mm above ground plane.
DD
= 12 V; G
S
50 Ω
input
= 3.3 mS; G
100 kΩ
1 nF
L
= 1 mS.
V DD
L1
140 kΩ
1 nF
C1
2 to 18 pF
L2
Fig.18 Gain control test circuit at f = 800 MHz.
1 nF
1 nF
C2
0.5 to 3.5 pF
V agc
270 kΩ
1.8 kΩ
V DD
9
360 Ω
1 nF
C3
0.5 to
3.5 pF
L3
V DD
L4
C4
4 to 40 pF
1 nF
1 nF
BF998; BF998R
Product specification
MGE801
50 Ω
output

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