BF998T NXP Semiconductors, BF998T Datasheet - Page 5

• Manufacturer Part Number: BF998T
• Manufacturer: NXP Semiconductors

Specifications of BF998T

• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Depletion
• Continuous Drain Current: 0.03A
• Drain Source Voltage (max): 12V
• Noise Figure (max): 1(Typ)dB
• Frequency (max): 1GHz
• Package Type: SOT-143B
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 2.1@8V@Gate 1/1.2@8V@Gate 2pF
• Output Capacitance (typ)@vds: 1.05@8VpF
• Reverse Capacitance (typ): 0.025@8VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
1996 Aug 01
handbook, halfpage
handbook, halfpage
Silicon N-channel dual-gate MOS-FETs
(mA)
V
V
I D
G2-S
DS
(mA)
I D
Fig.7
= 8 V; V
24
20
16
12
Fig.5 Output characteristics; typical values.
= 4 V; T
8
4
0
24
20
16
12
−1600
0
8
4
0
G2-S
amb
Drain current as a function of gate 1
voltage; typical values.
= 4 V; T
−1200
= 25 C.
2
amb
4
−800
= 25 C.
6
−400
V DS (V)
V G1 (mV)
max
8
0
MGE813
MGE814
V G1-S =
min
typ
10
400
0.4 V
0.3 V
0.2 V
0.1 V
0 V
−0.1 V
−0.2 V
−0.3 V
−0.4 V
−0.5 V
5
handbook, halfpage
handbook, halfpage
Fig.8
V
V
DS
DS
(mA)
(mS)
|y fs |
I D
Fig.6 Transfer characteristics; typical values.
= 8 V; T
= 8 V; T
24
20
16
12
30
24
18
12
8
4
0
6
0
−1
Forward transfer admittance as a function of
drain current; typical values.
0
amb
amb
= 25 C.
= 25 C.
V G2-S = 0 V
4
8
V G2-S = 4 V
0
BF998; BF998R
12
Product specification
V G1 (V)
3 V
I D (mA)
16
2 V
0.5 V
MGE815
MGE811
0 V
1 V
20
1
4 V
3 V
2 V
1 V