BF1101WRT NXP Semiconductors, BF1101WRT Datasheet - Page 3

• Manufacturer Part Number: BF1101WRT
• Manufacturer: NXP Semiconductors

Specifications of BF1101WRT

• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 0.03A
• Drain Source Voltage (max): 7V
• Noise Figure (max): 2.5dB
• Frequency (max): 1GHz
• Package Type: CMPAK
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 2.2@5V@Gate 1/1.6@5V@Gate 2pF
• Output Capacitance (typ)@vds: 1.2@5VpF
• Reverse Capacitance (typ): 0.025@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
THERMAL CHARACTERISTICS
1999 May 14
V
I
I
I
P
T
T
R
handbook, halfpage
SYMBOL
SYMBOL
D
G1
G2
stg
j
DS
tot
N-channel dual-gate MOS-FETs
th j-s
(mW)
P tot
s
250
200
150
100
is the temperature of the soldering point of the source lead.
50
0
0
drain-source voltage
drain current
gate 1 current
gate 2 current
total power dissipation
storage temperature
operating junction temperature
thermal resistance from junction to soldering point
Fig.4 Power derating curve.
50
PARAMETER
100
150
T s (°C)
PARAMETER
MGL615
200
T
s
 110 C; note 1
3
CONDITIONS
BF1101; BF1101R; BF1101WR





65

MIN.
VALUE
200
7
30
10
10
200
+150
+150
Product specification
MAX.
UNIT
K/W
V
mA
mA
mA
mW
C
C
UNIT