BF909 NXP Semiconductors, BF909 Datasheet - Page 4

• Manufacturer Part Number: BF909
• Description: Enhancement type Field-Effect Transistor in a plastic SOT143 package
• Manufacturer: NXP Semiconductors

Specifications of BF909

• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 0.04A
• Drain Source Voltage (max): 7V
• Noise Figure (max): 2.8dB
• Frequency (max): 1GHz
• Package Type: SOT-143B
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 3.6@5V@Gate 1/2.3@5V@Gate 2pF
• Output Capacitance (typ)@vds: 2.3@5VpF
• Reverse Capacitance (typ): 0.035@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 200@Ta=50CmW
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a printed-circuit board.
2. T
STATIC CHARACTERISTICS
T
Note
1. R
DYNAMIC CHARACTERISTICS
Common source; T
R
R
V
V
V
V
V
V
I
I
I
C
C
C
C
F
j
DSX
G1-SS
G2-SS
SYMBOL
SYMBOL
SYMBOL
y
(BR)G1-SS
(BR)G2-SS
(F)S-G1
(F)S-G2
G1-S(th)
G2-S(th)
th j-a
th j-s
= 25 C; unless otherwise specified.
ig1-s
ig2-s
os
rs
N-channel dual gate MOS-FETs
fs
s
G1
is the temperature at the soldering point of the source lead.
connects gate 1 to V
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
forward transfer admittance
input capacitance at gate 1
input capacitance at gate 2
drain-source capacitance
reverse transfer capacitance f = 1 MHz
noise figure
gate 1-source breakdown voltage
gate 2-source breakdown voltage
forward source-gate 1 voltage
forward source-gate 2 voltage
gate 1-source threshold voltage
gate 2-source threshold voltage
drain-source current
gate 1 cut-off current
gate 2 cut-off current
BF909
BF909R
BF909
BF909R
amb
PARAMETER
= 25 C; V
PARAMETER
GG
= 5 V; see Fig.18.
PARAMETER
DS
= 5 V; V
G2-S
pulsed; T
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 800 MHz; G
Rev. 02 - 19 November 2007
= 4 V; I
V
V
V
V
V
I
V
V
R
V
V
D
G2-S
G1-S
G2-S
G1-S
G2-S
G1-S
G2-S
G1-S
G2-S
G1
j
= 20 A
= 25 C
D
CONDITIONS
= 120 k ; note 1
= 15 mA; unless otherwise specified.
= V
= V
= V
= V
= 4 V; V
= V
= 4 V; V
= 5 V; V
= 5 V; V
S
CONDITIONS
DS
DS
DS
DS
DS
= G
= 0; I
= 0; I
= 0; I
= 0; I
= 5 V; I
Sopt
DS
DS
G2-S
G1-S
note 1
note 2
T
T
; B
= 5 V;
= 5 V;
s
s
CONDITIONS
G1-S
G2-S
S-G1
S-G2
= 92 C
= 78 C
= V
= V
S
D
= B
= 20 A
= 10 mA
= 10 mA
= 10 mA
= 10 mA
DS
DS
Sopt
= 0
= 0
36
MIN.
6
6
0.5
0.5
0.3
0.3
12
MIN.
VALUE
BF909; BF909R
500
550
290
360
43
3.6
2.3
2.3
35
2
TYP.
Product specification
15
15
1
1.2
50
50
1.5
1.5
20
MAX.
50
4.3
3
3
50
2.8
MAX.
4 of 12
UNIT
K/W
K/W
K/W
K/W
V
V
V
V
V
V
mA
nA
nA
UNIT
mS
pF
pF
pF
fF
dB
UNIT