BF909 NXP Semiconductors, BF909 Datasheet - Page 12

• Manufacturer Part Number: BF909
• Description: Enhancement type Field-Effect Transistor in a plastic SOT143 package
• Manufacturer: NXP Semiconductors

Specifications of BF909

• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 0.04A
• Drain Source Voltage (max): 7V
• Noise Figure (max): 2.8dB
• Frequency (max): 1GHz
• Package Type: SOT-143B
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 3.6@5V@Gate 1/2.3@5V@Gate 2pF
• Output Capacitance (typ)@vds: 2.3@5VpF
• Reverse Capacitance (typ): 0.035@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 200@Ta=50CmW
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
Revision history
Revision history
Document ID
BF909_N_2
Modifications:
BF909_1
Release date
20071119
19950425
•
Fig.1 and 2 on page 2; Figure note changed
Data sheet status
Product data sheet
Product specification
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]
Change notice
-
-
N-channel dual gate MOS-FETs
BF909; BF909R
Supersedes
BF909_1
-
Date of release: 19 November 2007
Document identifier: BF909_N_2
All rights reserved.