BF909 NXP Semiconductors, BF909 Datasheet - Page 3

• Manufacturer Part Number: BF909
• Description: Enhancement type Field-Effect Transistor in a plastic SOT143 package
• Manufacturer: NXP Semiconductors

Specifications of BF909

• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 0.04A
• Drain Source Voltage (max): 7V
• Noise Figure (max): 2.8dB
• Frequency (max): 1GHz
• Package Type: SOT-143B
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 3.6@5V@Gate 1/2.3@5V@Gate 2pF
• Output Capacitance (typ)@vds: 2.3@5VpF
• Reverse Capacitance (typ): 0.035@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 200@Ta=50CmW
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board.
V
I
I
I
P
T
T
D
G1
G2
handbook, halfpage
stg
j
DS
tot
N-channel dual gate MOS-FETs
(mW)
P tot
SYMBOL
250
200
150
100
50
0
0
Fig.3 Power derating curves.
drain-source voltage
drain current
gate 1 current
gate 2 current
total power dissipation
storage temperature
operating junction temperature
50
BF909R
BF909
BF909R
100
PARAMETER
BF909
150
T
amb
MLB935
( C)
o
Rev. 02 - 19 November 2007
200
see Fig.3
up to T
up to T
CONDITIONS
amb
amb
= 50 C; note 1
= 40 C; note 1
65
MIN.
BF909; BF909R
7
40
200
200
+150
150
10
10
Product specification
MAX.
3 of 12
V
mA
mA
mA
mW
mW
C
C
UNIT