MC68HC811E2FN Freescale Semiconductor, MC68HC811E2FN Datasheet - Page 182

• Manufacturer Part Number: MC68HC811E2FN
• Manufacturer: Freescale Semiconductor

Specifications of MC68HC811E2FN

• Cpu Family: HC11
• Device Core Size: 8b
• Frequency (max): 4MHz
• Interface Type: SCI/SPI
• Program Memory Type: ROMLess
• Program Memory Size: Not Required
• Total Internal Ram Size: 256Byte
• # I/os (max): 38
• Number Of Timers - General Purpose: 8
• Operating Supply Voltage (typ): 3.3/5V
• Operating Supply Voltage (max): 5.5V
• Operating Supply Voltage (min): 3V
• On-chip Adc: 8-chx8-bit
• Instruction Set Architecture: CISC
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Mounting: Surface Mount
• Pin Count: 52
• Package Type: PLCC
• Lead Free Status / Rohs Status: Supplier Unconfirmed

Ordering Information and Mechanical Specifications
11.5 52-Pin Plastic-Leaded Chip Carrier (Case 778)
182
–L–
C
0.010 (0.25)
52
K1
Z
K
G
VIEW S
S
G1
T
L–M
–N–
1
F
H
S
N
S
0.007 (0.18)
M68HC11E Family Data Sheet, Rev. 5.1
VIEW S
0.007 (0.18)
A
V
R
–M–
J
Y
E
W
BRK
0.007 (0.18)
0.007 (0.18)
M
M
–T–
T
T
0.004 (0.100)
L–M
D
D
L–M
SEATING
PLANE
M
M
S
S
T
T
N
N
L–M
L–M
S
S
S
S
N
N
B
Z
S
S
VIEW D–D
X
U
0.007 (0.18)
NOTES:
0.007 (0.18)
1. DATUMS –L–, –M–, AND –N– DETERMINED WHERE
2. DIMENSION G1, TRUE POSITION TO BE MEASURED
3. DIMENSIONS R AND U DO NOT INCLUDE MOLD
4. DIMENSIONING AND TOLERANCING PER ANSI
5. CONTROLLING DIMENSION: INCH.
6. THE PACKAGE TOP MAY BE SMALLER THAN THE
7. DIMENSION H DOES NOT INCLUDE DAMBAR
TOP OF LEAD SHOULDER EXITS PLASTIC BODY AT
MOLD PARTING LINE.
AT DATUM –T–, SEATING PLANE.
FLASH. ALLOWABLE MOLD FLASH IS 0.010 (0.250)
PER SIDE.
Y14.5M, 1982.
PACKAGE BOTTOM BY UP TO 0.012 (0.300).
DIMENSIONS R AND U ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY
EXCLUSIVE OF MOLD FLASH, TIE BAR BURRS, GATE
BURRS AND INTERLEAD FLASH, BUT INCLUDING
ANY MISMATCH BETWEEN THE TOP AND BOTTOM
OF THE PLASTIC BODY.
PROTRUSION OR INTRUSION. THE DAMBAR
PROTRUSION(S) SHALL NOT CAUSE THE H
DIMENSION TO BE GREATER THAN 0.037 (0.940).
THE DAMBAR INTRUSION(S) SHALL NOT CAUSE THE
H DIMENSION TO BE SMALLER THAN 0.025 (0.635).
DIM
G1
K1
W
A
B
C
E
G
H
K
R
U
V
X
Y
F
J
Z
M
G1
T
0.785
0.785
0.165
0.090
0.013
0.026
0.020
0.025
0.750
0.750
0.042
0.042
0.042
0.710
0.040
MIN
0.010 (0.25)
–––
0.050 BSC
L–M
2
INCHES
M
0.795
0.795
0.180
0.019
0.032
0.756
0.756
0.048
0.048
0.056
0.020
0.730
0.110
T
MAX
S
–––
–––
10
–––
L–M
N
Freescale Semiconductor
S
19.94
19.94
19.05
19.05
18.04
S
MILLIMETERS
MIN
4.20
2.29
0.33
0.66
0.51
0.64
1.07
1.07
1.07
1.02
S
–––
1.27 BSC
2
T
N
L–M
MAX
20.19
20.19
19.20
19.20
18.54
S
4.57
0.48
0.81
1.21
1.21
1.42
0.50
2.79
–––
–––
10
–––
S
N
S