SUB75N03-04 Vishay, SUB75N03-04 Datasheet - Page 4

• Manufacturer Part Number: SUB75N03-04
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SUB75N03-04

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.004Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 75A
• Power Dissipation: 187W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: TO-263
• Lead Free Status / Rohs Status: Not Compliant

SUP/SUB75N03-04
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
THERMAL RATINGS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see
www.vishay.com
4
http://www.vishay.com/ppg?70745.
0.01
100
0.1
80
60
40
20
0
2
1
2.5
2.0
1.5
1.0
0.5
0.0
0
10
- 50
Duty Cycle = 0.5
0.2
0.1
0.02
- 5
0.05
On-Resistance vs. Junction Temperature
Maximum Avalanche and Drain Current
V
I
- 25
25
D
GS
Single Pulse
= 30 A
= 10 V
T
T
0
J
50
C
vs. Case Temperature
- Case Temperature (°C)
- Junction Temperature (°C)
25
75
10
50
- 4
100
75
Normalized Thermal Transient Impedance, Junction-to-Case
100
125
125
150
Square Wave Pulse Duration (sec)
10
150
- 3
175
175
10
- 2
100
1000
10
100
1
10
1
0.1
T
Limited
by r
J
Source-Drain Diode Forward Voltage
= 150 °C
DS(on)
0.3
V
SD
V
DS
T
Single Pulse
- Source-to-Drain Voltage (V)
10
C
Safe Operating Area
- 1
= 25 °C
- Drain-to-Source Voltage (V)
1.0
0.6
S-62484-Rev. F, 04-Dec-06
Document Number: 70745
0.9
T
J
= 25 °C
10.0
1
1.2
1 ms
10 ms
100 ms
dc
100 µs
100.0
1.5
3