SUB75N03-04 Vishay, SUB75N03-04 Datasheet - Page 3

• Manufacturer Part Number: SUB75N03-04
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SUB75N03-04

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.004Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 75A
• Power Dissipation: 187W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: TO-263
• Lead Free Status / Rohs Status: Not Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70745
S-62484-Rev. F, 04-Dec-06
14000
12000
10000
8000
6000
4000
2000
250
200
150
100
175
150
125
100
50
75
50
25
0
0
0
0
0
0
C
T
rss
C
= - 55 °C
20
2
V
6
V
V
DS
DS
GS
Output Characteristics
V
- Drain-to-Source Voltage (V)
Transconductance
- Drain-to-Source Voltage (V)
GS
- Gate-to-Source Voltage (V)
= 10, 9, 8, 7, 6, 5 V
Capacitance
40
12
4
C
oss
60
18
6
C
80
24
8
4 V
3 V
iss
125 °C
25 °C
100
10
30
0.008
0.006
0.004
0.002
0.000
200
150
100
20
16
12
50
8
4
0
0
0
0
0
V
I
D
DS
= 75 A
On-Resistance vs. Drain Current
20
= 30 V
V
GS
V
1
Transfer Characteristics
100
GS
SUP/SUB75N03-04
Q
= 10 V
g
I
- Gate-to-Source Voltage (V)
D
40
- Total Gate Charge (nC)
T
25 °C
- Drain Current (A)
C
Gate Charge
= 125 °C
2
V
GS
200
60
Vishay Siliconix
= 4.5 V
3
80
www.vishay.com
- 55 °C
300
100
4
120
400
5
3