SUB75N03-04 Vishay, SUB75N03-04 Datasheet - Page 3
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SUB75N03-04
Manufacturer Part Number
SUB75N03-04
Description
Manufacturer
Vishay
Type
Power MOSFETr
Datasheet
1.SUB75N03-04.pdf
(5 pages)
Specifications of SUB75N03-04
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.004Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Continuous Drain Current
75A
Power Dissipation
187W
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
TO-263
Lead Free Status / Rohs Status
Not Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70745
S-62484-Rev. F, 04-Dec-06
14000
12000
10000
8000
6000
4000
2000
250
200
150
100
175
150
125
100
50
75
50
25
0
0
0
0
0
0
C
T
rss
C
= - 55 °C
20
2
V
6
V
V
DS
DS
GS
Output Characteristics
V
- Drain-to-Source Voltage (V)
Transconductance
- Drain-to-Source Voltage (V)
GS
- Gate-to-Source Voltage (V)
= 10, 9, 8, 7, 6, 5 V
Capacitance
40
12
4
C
oss
60
18
6
C
80
24
8
4 V
3 V
iss
125 °C
25 °C
100
10
30
0.008
0.006
0.004
0.002
0.000
200
150
100
20
16
12
50
8
4
0
0
0
0
0
V
I
D
DS
= 75 A
On-Resistance vs. Drain Current
20
= 30 V
V
GS
V
1
Transfer Characteristics
100
GS
SUP/SUB75N03-04
Q
= 10 V
g
I
- Gate-to-Source Voltage (V)
D
40
- Total Gate Charge (nC)
T
25 °C
- Drain Current (A)
C
Gate Charge
= 125 °C
2
V
GS
200
60
Vishay Siliconix
= 4.5 V
3
80
www.vishay.com
- 55 °C
300
100
4
120
400
5
3