SUB75N03-04 Vishay, SUB75N03-04 Datasheet
SUB75N03-04
Specifications of SUB75N03-04
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SUB75N03-04 Summary of contents
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... DRAIN connected to TAB G Top View SUB75N03- Top View SUP75N03-04 Ordering Information: SUP75N03-04 SUP75N03-04-E3 (Lead (Pb)-free) SUB75N03-04 SUB75N03-04-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Gate-Source Voltage Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Pulse Diode Forward Current Continuous Source Current (Diode Conduction) ...
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... SUP/SUB75N03-04 Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge ...
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... C rss 2000 Drain-to-Source Voltage (V) DS Capacitance Document Number: 70745 S-62484-Rev. F, 04-Dec- 0.008 25 °C 0.006 125 °C 0.004 0.002 0.000 60 80 100 C iss SUP/SUB75N03-04 Vishay Siliconix 200 150 100 T = 125 ° ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics Drain Current (A) D On-Resistance vs ...
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... SUP/SUB75N03-04 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 2.0 1.5 1.0 0.5 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature THERMAL RATINGS 100 100 T - Case Temperature (°C) C Maximum Avalanche and Drain Current vs. Case Temperature 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...