SUB75N03-04 Vishay, SUB75N03-04 Datasheet - Page 2

• Manufacturer Part Number: SUB75N03-04
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SUB75N03-04

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.004Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 75A
• Power Dissipation: 187W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: TO-263
• Lead Free Status / Rohs Status: Not Compliant

SUP/SUB75N03-04
Vishay Siliconix
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristics
Diode Forward Voltage
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
b
b
b
J
= 25 °C, unless otherwise noted
b
V
Symbol
I
V
r
(BR)DSS
RM(rec)
I
DS(on)
t
t
I
C
I
C
V
GS(th)
D(on)
C
Q
Q
d(on)
d(off)
GSS
DSS
Q
Q
g
t
oss
t
t
rss
SD
iss
rr
fs
gs
gd
r
f
rr
g
I
V
V
V
V
D
V
V
DS
DS
GS
GS
DS
GS
≅ 50 A, V
I
= 30 V, V
= 30 V, V
= 10 V, I
= 10 V, I
F
V
= 30 V, V
V
= 0 V, V
V
V
V
V
V
V
= 50 A, di/dt = 100 A/µs
DS
V
DS
DD
I
GS
DS
DS
F
GS
DS
GS
Test Conditions
= 75 A, V
= 0 V, V
= V
= 0 V, I
= 30 V, R
= 30 V, V
= 5 V, V
= 4.5 V, I
= 10 V, I
= 15 V, I
GEN
D
D
GS
DS
GS
GS
GS
= 25 A, T
= 25 A, T
, I
= 10 V, R
= 25 V, f = 1 MHz
= 0 V, T
= 0 V, T
= 10 V, I
D
GS
D
GS
GS
= 250 µA
D
D
L
GS
D
= 250 µA
= ± 20 V
= 75 A
= 25 A
= 0.6 Ω
= 10 V
= 75 A
= 0 V
= 0 V
J
J
J
J
G
= 125 °C
= 175 °C
= 125 °C
= 175 °C
D
= 75 A
= 2.5 Ω
Min
120
30
30
1
0.0034
10742
0.005
1811
Typ
775
200
190
2.8
0.1
40
40
20
40
95
70
S-62484-Rev. F, 04-Dec-06
a
Document Number: 70745
± 500
0.004
0.006
0.006
0.008
Max
0.36
200
250
120
1.3
50
40
3
1
6
Unit
nA
µA
pF
nC
µC
ns
ns
Ω
V
A
S
V
A