PSMN063-150D NXP Semiconductors, PSMN063-150D Datasheet - Page 8
![SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology](/photos/40/55/405588/sot428_sml.jpg)
PSMN063-150D
Manufacturer Part Number
PSMN063-150D
Description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Type
Power MOSFETr
Datasheet
1.PSMN063-150D.pdf
(12 pages)
Specifications of PSMN063-150D
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.063Ohm
Drain-source On-volt
150V
Gate-source Voltage (max)
±20V
Continuous Drain Current
29A
Power Dissipation
150W
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
DPAK
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PSMN063-150D
Manufacturer:
NXP
Quantity:
24 000
Part Number:
PSMN063-150D
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Company:
Part Number:
PSMN063-150D118
Manufacturer:
NXP Semiconductors
Quantity:
135
NXP Semiconductors
PSMN063-150D_4
Product data sheet
Fig 13. Input, output and reverse transfer capacitances
(pF)
P
10
10
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
−1
1
C
C
C
oss
rss
iss
10
V
DS
003aaa154
(V)
Rev. 04 — 17 December 2009
10
2
N-channel TrenchMOS SiliconMAX standard level FET
Fig 14. Source current as a function of source-drain
(A)
I
S
30
20
10
0
voltage; typical values
0
0.4
T
j
PSMN063-150D
= 175 °C
0.8
T
V
j
© NXP B.V. 2009. All rights reserved.
= 25 °C
SD
003aaa156
(V)
1.2
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