PSMN063-150D NXP Semiconductors, PSMN063-150D Datasheet - Page 7

• Manufacturer Part Number: PSMN063-150D
• Description: SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of PSMN063-150D

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.063Ohm
• Drain-source On-volt: 150V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 29A
• Power Dissipation: 150W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: DPAK
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
PSMN063-150D_4
Product data sheet
Fig 9.
Fig 11. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
5
4
3
2
1
0
3
2
1
0
−60
-60
junction temperature
factor as a function of junction temperature
Gate-source threshold voltage as a function of
0
0
60
60
max
min
typ
120
120
T
03aa30
T
j
j
(°C)
( ° C)
03aa32
Rev. 04 — 17 December 2009
180
180
N-channel TrenchMOS SiliconMAX standard level FET
Fig 10. Drain-source on-state resistance as a function
Fig 12. Gate-source voltage as a function of gate
R
DSon
(Ω)
V
(V)
GS
0.20
0.16
0.12
0.08
0.04
12
0
8
4
0
of drain current; typical values
charge; typical values
0
0
4.4
4.6
5
4.8
5.0
10
20
PSMN063-150D
5.2
15
V
DD
V
5.4
GS
= 30 V
40
20
(V) =
V
DD
Q
© NXP B.V. 2009. All rights reserved.
G
6
8
= 120 V
25
003aaa151
003aaa155
(nC)
I
D
10
(A)
30
60
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