PSMN063-150D NXP Semiconductors, PSMN063-150D Datasheet
PSMN063-150D
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PSMN063-150D Summary of contents
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... PSMN063-150D N-channel TrenchMOS SiliconMAX standard level FET Rev. 04 — 17 December 2009 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...
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... Figure °C mb ≤ 10 µs; pulsed ° ° j(init Ω 0.2 ms; unclamped ≤ °C; sup GS j(init Ω; unclamped R GS Rev. 04 — 17 December 2009 PSMN063-150D Graphic symbol mbb076 2 3 Version SOT428 Min Max - 150 - 150 -20 20 and and Figure 3 - 116 - 150 -55 175 ...
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... Product data sheet N-channel TrenchMOS SiliconMAX standard level FET 03aa24 120 P der (%) 150 200 0 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature DC 10 Rev. 04 — 17 December 2009 PSMN063-150D 03aa16 50 100 150 200 T (°C) mb 003aaa148 = 10 μ 100 μ 100 ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN063-150D_4 Product data sheet N-channel TrenchMOS SiliconMAX standard level FET Conditions see Figure 4 vertical in still air −4 − Rev. 04 — 17 December 2009 PSMN063-150D Min Typ Max Unit - - 1 K K/W 003aaa149 ...
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... Figure 120 see Figure MHz see Figure 13 = 2.7 Ω 5.6 Ω °C G(ext °C; see /dt = -100 A/µ ° Rev. 04 — 17 December 2009 PSMN063-150D Min Typ Max 133 - - 150 - - Figure Figure Figure 0. 500 - 0.02 100 - 0.02 100 - - 176 - ° ° ° ...
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... Output characteristics: drain current as a function of drain-source voltage; typical values 003aaa152 ( ° (V) GS Fig 8. Forward transconductance as a function of drain current; typical values Rev. 04 — 17 December 2009 PSMN063-150D 003aaa150 V ( 6.0 GS 8.0 5.4 5.2 5.0 4.8 4.6 4.4 0.4 0.8 1.2 1.6 2.0 V (V) DS 003aaa153 = 25 ° ...
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... T (°C) j Fig 10. Drain-source on-state resistance as a function of drain current; typical values 03aa30 ( 120 180 ( ° Fig 12. Gate-source voltage as a function of gate charge; typical values Rev. 04 — 17 December 2009 PSMN063-150D 003aaa151 4.6 4.8 5.0 5 (A) D 003aaa155 120 V DD ...
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... PSMN063-150D_4 Product data sheet N-channel TrenchMOS SiliconMAX standard level FET 003aaa154 ( (V) DS Fig 14. Source current as a function of source-drain voltage; typical values Rev. 04 — 17 December 2009 PSMN063-150D 003aaa156 = 175 ° ° 0.4 0.8 V (V) SD © NXP B.V. 2009. All rights reserved. 1 ...
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... min min 0.56 6.22 6.73 4.0 4.45 2.285 0.20 5.98 6.47 REFERENCES JEDEC JEITA TO-252 SC-63 Rev. 04 — 17 December 2009 PSMN063-150D min 10.4 2.95 0.9 0.5 4.57 9.6 2.55 0.5 EUROPEAN ISSUE DATE PROJECTION 06-02-14 06-03-16 © NXP B.V. 2009. All rights reserved. ...
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... PSMN063-150D_4 Product data sheet N-channel TrenchMOS SiliconMAX standard level FET Data sheet status Change notice Product data sheet - Product data - Product specification - Objective specification - Rev. 04 — 17 December 2009 PSMN063-150D Supersedes PSMN063_150D-03 PSMN063-150D_2 PSMN063-150D_1 - © NXP B.V. 2009. All rights reserved ...
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... Export might require a prior authorization from national authorities. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS— trademark of NXP B.V. to:salesaddresses@nxp.com Rev. 04 — 17 December 2009 PSMN063-150D © NXP B.V. 2009. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 17 December 2009 Document identifier: PSMN063-150D_4 ...