BLW96 NXP Semiconductors, BLW96 Datasheet - Page 7

• Manufacturer Part Number: BLW96
• Description: NPN silicon planar epitaxial transistor intended for use in class-A,AB and B operated high power industrial and military transmitting equipment in the HF and VHF band
• Manufacturer: NXP Semiconductors

Specifications of BLW96

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 55V
• Emitter-base Voltage: 4V
• Collector Current (dc) (max): 12A
• Dc Current Gain (min): 15
• Power Dissipation: 340W
• Frequency (max): 245MHz
• Operating Temp Range: -65C to 200C
• Operating Temperature Classification: Military
• Mounting: Screw
• Pin Count: 4
• Lead Free Status / Rohs Status: Compliant

Philips Semiconductors
Ruggedness
The BLW96 is capable of withstanding full load mismatch
(VSWR = 50 through all phases) up to 150 W (P.E.P.) or a
load mismatch (VSWR = 5 through all phases) up to
200 W (P.E.P.) under the following conditions:
V
August 1986
handbook, halfpage
CE
HF/VHF power transistor
V
f
Fig.9
2
d 3 , d 5
CE
= 45 V; f = 28 MHz; T
(dB)
= 28,001 MHz; T
= 50 V; I
25
35
45
0
Intermodulation distortion as a function of
output power.
C(ZS)
= 0,1 A; f
h
= 25 C; typical values.
d 5
d 3
100
1
(1)
= 28,000 MHz;
h
= 70 C; R
200
P.E.P. (W)
th mb-h
MGP692
= 0,2 K/W.
300
7
handbook, halfpage
V
f
Fig.10 Double-tone efficiency and power gain as a
2
CE
= 28,001 MHz; T
(%)
dt
100
= 50 V; I
75
50
25
0
0
function of output power.
C(ZS)
= 0,1 A; f
h
G p
= 25 C; typical values.
dt
100
1
= 28,000 MHz;
200
Product specification
P.E.P. (W)
MGP693
BLW96
300
20
15
10
5
0
(dB)
G p