BLW96 NXP Semiconductors, BLW96 Datasheet - Page 2

• Manufacturer Part Number: BLW96
• Description: NPN silicon planar epitaxial transistor intended for use in class-A,AB and B operated high power industrial and military transmitting equipment in the HF and VHF band
• Manufacturer: NXP Semiconductors

Specifications of BLW96

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 55V
• Emitter-base Voltage: 4V
• Collector Current (dc) (max): 12A
• Dc Current Gain (min): 15
• Power Dissipation: 340W
• Frequency (max): 245MHz
• Operating Temp Range: -65C to 200C
• Operating Temperature Classification: Military
• Mounting: Screw
• Pin Count: 4
• Lead Free Status / Rohs Status: Compliant

Philips Semiconductors
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
AB and B operated high power
industrial and military transmitting
equipment in the h.f. and v.h.f. band.
The transistor presents excellent
performance as a linear amplifier in
s.s.b. applications. It is resistance
stabilized and is guaranteed to
withstand severe load mismatch
QUICK REFERENCE DATA
R.F. performance up to T
Note
1.
PIN CONFIGURATION
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986
MODE OF
OPERATION
s.s.b. (class-AB)
c.w. (class-B)
s.s.b. (class-A)
HF/VHF power transistor
dt
at 200 W P.E.P.
handbook, halfpage
Fig.1 Simplified outline. SOT121B.
1
4
V
h
50
50
40
V
CE
= 25 C
1,6
MHz
108
28
f
28
conditions. Transistors are supplied
in matched h
The transistor has a
envelope with a ceramic cap. All
leads are isolated from the flange.
25
MLA876
200 (P.E.P.)
200
50 (P.E.P.) typ. 19
P
3
W
2
L
FE
groups.
2
1
2
typ.
" flange
G
dB
p
13,5
6,5 typ. 67
%
40
PINNING - SOT121B.
(1)
PIN
1
2
3
4
typ.
dB
d
collector
emitter
base
emitter
3
30
40
Product specification
DESCRIPTION
dB
d
5
BLW96
30
40
I
C(ZS)
(I
0,1
(6)
(4)
A
C
)