BLW96 NXP Semiconductors, BLW96 Datasheet

NPN silicon planar epitaxial transistor intended for use in class-A,AB and B operated high power industrial and military transmitting equipment in the HF and VHF band

BLW96

Manufacturer Part Number
BLW96
Description
NPN silicon planar epitaxial transistor intended for use in class-A,AB and B operated high power industrial and military transmitting equipment in the HF and VHF band
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLW96

Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
55V
Emitter-base Voltage
4V
Collector Current (dc) (max)
12A
Dc Current Gain (min)
15
Power Dissipation
340W
Frequency (max)
245MHz
Operating Temp Range
-65C to 200C
Operating Temperature Classification
Military
Mounting
Screw
Pin Count
4
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLW96
Manufacturer:
WESTCODE
Quantity:
120
Part Number:
BLW96
Manufacturer:
NXP
Quantity:
5 510
Part Number:
BLW96D
Manufacturer:
ASI
Quantity:
20 000
DISCRETE SEMICONDUCTORS
DATA SHEET
BLW96
HF/VHF power transistor
August 1986
Product specification

Related parts for BLW96

BLW96 Summary of contents

Page 1

... DISCRETE SEMICONDUCTORS DATA SHEET BLW96 HF/VHF power transistor Product specification August 1986 ...

Page 2

... All leads are isolated from the flange MHz W 1 200 (P.E.P.) 108 200 typ (P.E.P.) typ MLA876 2 Product specification (1) 13 6,5 typ. 67 typ. 40 PINNING - SOT121B. PIN DESCRIPTION 1 collector 2 emitter 3 base 4 emitter BLW96 I C(ZS 0,1 (6) 40 (4) ...

Page 3

... CEO V max. EBO I max. C(AV) I max max stg T max. j 400 300 derate by 1.58 W/K 200 1.35 W/K 100 100 1 MHz 1 MHz Fig.3 Power/temperature derating curves j-mb(dc j-mb(rf mb-h BLW96 110 340 W 150 C 200 C MGP686 150 0,63 K/W 0,45 K/W 0,2 K/W ...

Page 4

... CB Collector capacitance MHz Feedback capacitance MHz I = 150 mA Collecting-flange capacitance Notes 1. Measured under pulse conditions Measured under pulse conditions: t August 1986 (1) (1) (2) 300 s; 0,02 0,01 Product specification BLW96 V 110 V (BR)CES (BR)CEO (BR)EBO CES SBO SBR typ 1,2 FE1 FE2 V typ. ...

Page 5

... Fig.4 Typical values; V 300 handbook, halfpage (MHz 200 5 V 100 Fig.6 Typical values 100 MHz; T August 1986 MGP687 handbook, halfpage 1000 1250 V BE (mV MGP689 handbook, halfpage (pF ( Product specification Fig.5 Typical values 1000 C c 750 500 typ 250 Fig MHz BLW96 MGP688 (A) MGP690 ( ...

Page 6

... ATC means American Technical Ceramics. August 1986 = 28,001 MHz 2 G (%) I ( 200 W (P.E.P.) 13 T.U. 0.1 ) Fig.8 Test circuit; s.s.b. class-AB. (2) ) (2) (2) (2) ) 3,3 metal film resistors (PR37; 6 (1) ( C10 L4 C11 C6 C12 C13 C14 MGP691 ) in parallel ) in parallel 5%; 1,6 W each) Product specification BLW96 I C(ZS) A 0,1 50 ...

Page 7

... MHz typical values Fig.9 Intermodulation distortion as a function of (1) output power. Ruggedness The BLW96 is capable of withstanding full load mismatch (VSWR = 50 through all phases 150 W (P.E.P load mismatch (VSWR = 5 through all phases 200 W (P.E.P.) under the following conditions MHz August 1986 ...

Page 8

... Figs 11 and 12 are typical curves and hold for one transistor of a push-pull amplifier with cross-neutralization in s.s.b. class-AB operation. August 1986 MGP694 4 andbook, halfpage (MHz Fig.12 Input impedance (series components Product specification (MHz 200 W (P.E.P.); C(ZS neutralizing capacitor function of frequency. BLW96 MGP695 2 10 ...

Page 9

... P L (W) 300 typ 200 100 Fig. 108 MHz August 1986 P ( 200 typ. 45 MGP696 handbook, halfpage (dB ( Fig. Product specification G (dB typ. 6,5 typ 7 2 100 200 = 108 MHz typical values. BLW96 (%) typ. 67 MGP697 100 (%) 300 ...

Page 10

... Fig.15 Input impedance (series components). 20 handbook, halfpage G p (dB Typical values 200 class-B operation Fig.17 August 1986 MGP698 handbook, halfpage 125 f (MHz Typical values class-B operation Fig.16 Load impedance (series components). MGP700 125 f (MHz Product specification (MHz 200 BLW96 MGP699 125 ...

Page 11

... Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones. Relative to the according peak envelope powers these figures should be increased by 6 dB. August 1986 = 28,001 MHz typ T.U. Fig.18 Test circuit; s.s.b. class-A. 11 Product specification ( typ C10 C7 C8 MGP701 BLW96 ( < 40 ...

Page 12

... Philips Semiconductors HF/VHF power transistor 30 handbook, full pagewidth d 3 (dB Fig.19 Third order intermodulation distortion as a function of output power 28,000 MHz August 1986 28,001 MHz Product specification BLW96 MGP702 100 P.E.P. (W) (1) Typical values ...

Page 13

... REFERENCES JEDEC EIAJ 13 Product specification scale 24.90 6.48 12.32 18.42 0.51 1.02 24.63 6.22 12.06 0.98 0.255 0.485 0.725 0.02 0.04 0.97 0.245 0.475 EUROPEAN PROJECTION BLW96 SOT121B ISSUE DATE 97-06-28 ...

Page 14

... These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1986 14 Product specification BLW96 ...

Related keywords