LRS1331C Sharp Electronics, LRS1331C Datasheet - Page 4

• Manufacturer Part Number: LRS1331C
• Manufacturer: Sharp Electronics

Specifications of LRS1331C

• Lead Free Status / Rohs Status: Not Compliant

1. Description
The LRS1331C is a combination memory organized as 1,048,576 16 bit flash memory and 262,144 16 bit static RAM in one
package.
Features
Flash Memory
SRAM
- Power supply
- Operating temperature
- Not designed or rated as radiation hardened
- 72 pin CSP (LCSP072-P-0811) plastic package
- Flash memory has P-type bulk silicon, and SRAM has P-type bulk silicon
- Access Time
- Power Supply current (The current for F-V
- Optimized Array Blocking Architecture
- Extended Cycling Capability
- Enhanced Automated Suspend Options
- Access Time
- Power Supply current
Read
Word write
Block erase
Reset Power-Down
Standby
Two 4k-word Boot Blocks
Six 4k-word Parameter Blocks
Thirty-one 32k-word Main Blocks
Bottom Boot Location
100,000 Block Erase Cycles
Word Write Suspend to Read
Block Erase Suspend to Word Write
Block Erase Suspend to Read
Operating current
Standby current
Data retention current
CC
pin and F-V
L R S 1 3 3 1 C
CCW
• • • •
• • • •
• • • •
• • • •
• • • •
• • • •
• • • •
• • • •
(F-V
• • • •
• • • •
• • • •
• • • •
• • • •
CCW
pin)
= 2.7 to 3.3V)
2.7V to 3.3V
-25°C to +85°C
90 ns
25 mA
57 mA
42 mA
20 µA
30 µA
85 ns
45 mA
15 µA
15 µA
8 mA
(Max.)
(Max. t
(Max.)
(Max.)
(Max. F-RP = GND ± 0.2V,
(Max. F-CE = F-RP = F-V
(Max.)
(Max. t
(Max. t
(Max.)
(Max. S-V
I
CYCLE
RC
RC
OUT
,t
,t
CC
WC
WC
(F-RY/BY) = 0mA)
= 3.0V)
= 200ns, CMOS Input)
= Min.)
= 1µs, CMOS Input)
CC
± 0.2V)
Rev. 1.00
2