BUK9506-40B NXP Semiconductors, BUK9506-40B Datasheet - Page 7

• Manufacturer Part Number: BUK9506-40B
• Description: MOSFET Power HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9506-40B

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.005 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 129 A
• Power Dissipation: 203 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 92 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 145 ns
• Lead Free Status / Rohs Status: Details
• Other names: BUK9506-40B,127

NXP Semiconductors
BUK9506-40B
Product data sheet
Fig 5.
Fig 7.
(A)
(A)
I
I
10
10
10
10
10
10
D
D
300
200
100
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
10
7
6
5
2
min
1
4
4.8
4.6
4.4
4.2
4
3.8
3.6
3.4
3.2
3
2.8
2.6
typ
6
Label is V
2
max
V
All information provided in this document is subject to legal disclaimers.
GS
8
V
GS
03nm18
(V)
DS
03ng53
(V)
(V)
Rev. 02 — 25 January 2011
10
3
Fig 6.
Fig 8.
R
(mΩ)
DSon
g
(S)
fs
140
105
70
35
12
10
0
8
6
4
of gate-source voltage; typical values
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
3
0
N-channel TrenchMOS logic level FET
20
7
BUK9506-40B
11
40
V
© NXP B.V. 2011. All rights reserved.
I
D
GS
(A)
(V)
03nm17
03nm15
15
60
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