IPP65R190CFD Infineon Technologies, IPP65R190CFD Datasheet - Page 3

• Manufacturer Part Number: IPP65R190CFD
• Description: MOSFET Power CoolMOS 650V 190mOhm CFD2 N-Chan MOSFET
• Manufacturer: Infineon Technologies

Specifications of IPP65R190CFD

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.19 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 17.5 A
• Power Dissipation: 151 W
• Mounting Style: Through Hole
• Package / Case: TO-220
• Fall Time: 6.4 ns
• Gate Charge Qg: 68 nC
• Rise Time: 8.4 ns
• Lead Free Status / Rohs Status: Details
• Other names: IPP65R190CFDXK

> '
4 < <
4 < <
3--
1<
D
1 / < 1
<= + ;
1< - %
1 % F 1 % ,
%E /%
9 ' 3
<
<
<
+1
<
<
<
1
1
1 <1
1 <1
1 <1 9 +
1
! +
"#$
B
, ! -
! .
"#$
"#$
, !
, ! !
"#$
"#$
B
5
#
.
B
5
(