IPP65R190CFD Infineon Technologies, IPP65R190CFD Datasheet - Page 18

• Manufacturer Part Number: IPP65R190CFD
• Description: MOSFET Power CoolMOS 650V 190mOhm CFD2 N-Chan MOSFET
• Manufacturer: Infineon Technologies

Specifications of IPP65R190CFD

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.19 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 17.5 A
• Power Dissipation: 151 W
• Mounting Style: Through Hole
• Package / Case: TO-220
• Fall Time: 6.4 ns
• Gate Charge Qg: 68 nC
• Rise Time: 8.4 ns
• Lead Free Status / Rohs Status: Details
• Other names: IPP65R190CFDXK

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