IPP65R190CFD Infineon Technologies, IPP65R190CFD Datasheet

MOSFET Power CoolMOS 650V 190mOhm CFD2 N-Chan MOSFET

IPP65R190CFD

Manufacturer Part Number

IPP65R190CFD

Description

MOSFET Power CoolMOS 650V 190mOhm CFD2 N-Chan MOSFET

Manufacturer

Infineon Technologies

Datasheet

1.IPP65R190CFD.pdf (20 pages)

Specifications of IPP65R190CFD

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.19 Ohms

Drain-source Breakdown Voltage

650 V

Gate-source Breakdown Voltage

30 V

Continuous Drain Current

17.5 A

Power Dissipation

151 W

Mounting Style

Through Hole

Package / Case

TO-220

Fall Time

6.4 ns

Gate Charge Qg

68 nC

Rise Time

8.4 ns

Lead Free Status / Rohs Status

Details

Other names

IPP65R190CFDXK

Available stocks

Company

Part Number

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Quantity

Price

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Company:

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Part Number:

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Quantity:

Company:

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Part Number:

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Manufacturer:

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Quantity:

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