SPD06N80C3XT Infineon Technologies, SPD06N80C3XT Datasheet - Page 7

• Manufacturer Part Number: SPD06N80C3XT
• Manufacturer: Infineon Technologies
• Type: Power MOSFETr

Specifications of SPD06N80C3XT

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.9Ohm
• Drain-source On-volt: 800V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 6A
• Power Dissipation: 83W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: TO-252
• Lead Free Status / Rohs Status: Compliant

Rev. 2.4
13 Typ. capacitances
C =f(V
10
10
10
10
10
DS
4
3
2
1
0
); V
0
GS
=0 V; f =1 MHz
100
Crss
Coss
Ciss
200
V
DS
[V]
300
400
500
page 7
14 Typ. Coss stored energy
E
oss
= f(V
6
5
4
3
2
1
0
0
DS
)
100
200
300
V
DS
400
[V]
500
SPD06N80C3
600
2008-10-15
700
800