SPD06N80C3XT Infineon Technologies, SPD06N80C3XT Datasheet - Page 4

• Manufacturer Part Number: SPD06N80C3XT
• Manufacturer: Infineon Technologies
• Type: Power MOSFETr

Specifications of SPD06N80C3XT

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.9Ohm
• Drain-source On-volt: 800V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 6A
• Power Dissipation: 83W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: TO-252
• Lead Free Status / Rohs Status: Compliant

Rev. 2.4
1 Power dissipation
P
3 Max. transient thermal impedance
Z
parameter: D=t
thJC
tot
=f(T
=f(t
90
90
80
80
70
70
60
60
50
50
40
40
30
30
20
20
10
10
10
10
10
10
10
10
10
10
0
0
-1
-1
-2
-2
1
1
0
0
0
0
P
C
10
10
)
)
-5
-5
0.01
0.01
single pulse
single pulse
0.02
0.02
0.2
0.2
0.1
0.1
0.05
0.05
25
25
0.5
0.5
p
/T
10
10
-4
-4
50
50
T
T
t
t
C
C
75
75
10
10
p
p
[°C]
[°C]
[s]
[s]
-3
-3
100
100
10
10
-2
-2
125
125
10
10
150
150
page 4
-1
-1
2 Safe operating area
I
parameter: t
4 Typ. output characteristics
I
parameter: V
D
D
=f(V
=f(V
10
10
10
10
10
10
10
10
20
20
15
15
10
10
DS
DS
-1
-1
5
5
0
0
2
2
1
1
0
0
); T
1
1
); T
0
0
limited by on-state
limited by on-state
resistance
resistance
C
p
j
=25 °C; t
GS
=25 °C; D =0
5
5
10
10
p
=10 µs
10
10
V
V
V
V
DS
DS
DS
DS
DC
DC
10 V
10 V
[V]
[V]
[V]
[V]
6.5 V
6.5 V
6 V
6 V
5.5 V
5.5 V
5 V
5 V
15
15
100
100
10 ms
10 ms
SPD06N80C3
1 ms
1 ms
100 µs
100 µs
10 µs
10 µs
20
20
20 V
20 V
2008-10-15
1 µs
1 µs
1000
1000
25
25