SPD06N80C3XT Infineon Technologies, SPD06N80C3XT Datasheet
SPD06N80C3XT
Specifications of SPD06N80C3XT
Related parts for SPD06N80C3XT
SPD06N80C3XT Summary of contents
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TM CoolMOS Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective ...
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Maximum ratings =25 °C, unless otherwise specified j Parameter Continuous diode forward current 2) Diode pulse current 4) Reverse diode dv /dt Parameter Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, reflow ...
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Parameter Dynamic characteristics Input capacitance Output capacitance Effective output capacitance, energy 6) related Effective output capacitance, time 7) related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge ...
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Power dissipation P =f(T ) tot [°C] [°C] ...
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Typ. output characteristics I =f =150 °C; t =10 µ parameter 4 ...
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Typ. gate charge V =f pulsed GS gate D parameter 160 V 160 ...
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Typ. capacitances C =f MHz Ciss Coss 1 10 Crss 100 200 V DS Rev. 2.4 14 Typ. Coss stored energy E ...
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Definition of diode switching characteristics Rev. 2.4 page 8 SPD06N80C3 2008-10-15 ...
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PG-TO252-3: Outline Rev. 2.4 page 9 SPD06N80C3 2008-10-15 ...
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... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system ...