BUK9507-30B NXP Semiconductors, BUK9507-30B Datasheet - Page 9

• Manufacturer Part Number: BUK9507-30B
• Description: MOSFET Power HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9507-30B

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.005 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 108 A
• Power Dissipation: 157 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 98 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 135 ns
• Lead Free Status / Rohs Status: Details
• Other names: BUK9507-30B,127

NXP Semiconductors
BUK9507-30B
Product data sheet
Fig 13. Gate-source voltage as a function of gate
Fig 15. Source current as a function of source-drain voltage; typical values
V
(V)
GS
5
4
3
2
1
0
charge; typical values
0
10
V
DD
= 14 V
20
(A)
I
S
V
100
DD
75
50
25
30
0
0.0
= 24 V
All information provided in this document is subject to legal disclaimers.
Q
G
03nn12
(nC)
Rev. 02 — 31 January 2011
40
0.3
T
j
= 175 °C
0.6
Fig 14. Input, output and reverse transfer capacitances
(pF)
4500
3000
1500
C
0.9
0
10
as a function of drain-source voltage; typical
values
T
j
−2
= 25 ° C
V
SD
03nn11
(V)
N-channel TrenchMOS logic level FET
1.2
10
−1
BUK9507-30B
1
C
C
C
iss
oss
rss
10
© NXP B.V. 2011. All rights reserved.
V
DS
03nn18
(V)
10
2
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