BUK9507-30B NXP Semiconductors, BUK9507-30B Datasheet - Page 2

• Manufacturer Part Number: BUK9507-30B
• Description: MOSFET Power HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9507-30B

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.005 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 108 A
• Power Dissipation: 157 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 98 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 135 ns
• Lead Free Status / Rohs Status: Details
• Other names: BUK9507-30B,127

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
BUK9507-30B
Product data sheet
Pin
1
3
3
mb
Type number
BUK9507-30B
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
mounting base; connected to drain
Table 1.
[1]
Package
Name
TO-220AB
Symbol
Avalanche ruggedness
E
Dynamic characteristics
Q
DS(AL)S
GD
Continuous current is limited by package.
Quick reference data
Parameter
non-repetitive
drain-source avalanche
energy
gate-drain charge
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 31 January 2011
Simplified outline
…continued
SOT78A (TO-220AB)
Conditions
I
R
T
V
V
see
D
j(init)
GS
DS
GS
= 75 A; V
Figure 13
= 5 V; I
= 24 V; T
= 50 Ω; V
= 25 °C; unclamped
1 2
mb
3
D
sup
= 25 A;
j
GS
N-channel TrenchMOS logic level FET
= 25 °C;
≤ 30 V;
= 5 V;
Graphic symbol
BUK9507-30B
Min
-
-
mbb076
G
© NXP B.V. 2011. All rights reserved.
Typ
-
13
D
S
Version
SOT78A
Max Unit
327
-
2 of 14
mJ
nC