BUK9507-30B NXP Semiconductors, BUK9507-30B Datasheet - Page 10

• Manufacturer Part Number: BUK9507-30B
• Description: MOSFET Power HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9507-30B

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.005 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 108 A
• Power Dissipation: 157 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 98 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 135 ns
• Lead Free Status / Rohs Status: Details
• Other names: BUK9507-30B,127

NXP Semiconductors
7. Package outline
Fig 16. Package outline SOT78A (TO-220AB)
BUK9507-30B
Product data sheet
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
DIMENSIONS (mm are the original dimensions)
Note
1. Terminals in this zone are not tinned.
UNIT
mm
VERSION
OUTLINE
SOT78A
4.5
4.1
A
1.39
1.27
A 1
0.9
0.6
b
IEC
D
L
b 1
1.3
1.0
L 1
D 1
(1)
b 1
0.7
0.4
3-lead TO-220AB
c
All information provided in this document is subject to legal disclaimers.
JEDEC
15.8
15.2
1
e
D
E
p
REFERENCES
2
Rev. 02 — 31 January 2011
e
D 1
6.4
5.9
0
3
b
10.3
9.7
E
L 2
SC-46
q
JEITA
scale
5
2.54
e
10 mm
15.0
13.5
L
mounting
base
L 1
3.30
2.79
(1)
N-channel TrenchMOS logic level FET
max.
Q
3.0
L 2
A
A 1
PROJECTION
3.8
3.6
c
EUROPEAN
p
BUK9507-30B
3.0
2.7
q
2.6
2.2
Q
© NXP B.V. 2011. All rights reserved.
ISSUE DATE
03-01-22
05-03-14
SOT78A
10 of 14