EPC9003 EPC, EPC9003 Datasheet - Page 3

• Manufacturer Part Number: EPC9003
• Description: BOARD DEV FOR EPC2010 200V GAN
• Manufacturer: EPC
• Series: -r

Specifications of EPC9003

• Design Resources: EPC9003 Gerber Files EPC9003 Bill of Materials
• Featured Product: EPC Development Tools
• Main Purpose: Power Management, Half H-Bridge Driver (External FET)
• Embedded: No
• Utilized Ic / Part: EPC2010
• Primary Attributes: 200V, 5A Max Output GaNFET Capability
• Secondary Attributes: GaNFET Driver Circuit Uses 7 ~ 12V
• Lead Free Status / Rohs Status: Contains lead / RoHS non-compliant
• Other names: 917-1012

eGaN® FET DATASHEET
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60
50
40
30
20
10
0.8
0.6
0.4
0.2
-20
0
0
1
Figure 9: Normalized Threshold Voltage vs Temperature
Figure 7: Reverse Drain-Source Characteristics
0
0
Figure 5: Capacitance
I
D
= 3 mA
0.5
0
25˚C
125˚C
1
20
50
T
V
J
V
– Junction Temperature ( ˚C )
SD
DS
1.5
– Source to Drain Voltage (V)
– Drain to Source Voltage (V)
40
2
60
100
2.5
80
3
100
150
3.5
C
C
C
OSS
ISS
RSS
= C
= C
= C
120
GD
GD
GD
4
+ C
+ C
GS
SD
140
200
4.5
.025
.015
.005
.03
.02
.01
0
5
4
3
2
1
-20
0
0
Figure 6: Gate Charge
Figure 8: Normalized On Resistance vs Temperature
0
Figure 10: Gate Current
I
V
D
I
V
D
D
= 12 A
GS
= 100 V
= 12 A
= 5 V
0
25˚C
125˚C
1
1
20
T
J
V
– Junction Temperature ( ˚C )
GS
2
2
– Gate-to-Source Voltage (V)
Q
40
G
– Gate Charge (nC)
60
3
3
80
4
4
100
5
5
120
EPC2010
| PAGE 3
140
6
6