EPC9003 EPC, EPC9003 Datasheet

EPC9003

Manufacturer Part Number

EPC9003

Description

BOARD DEV FOR EPC2010 200V GAN

Manufacturer

EPC

Series

-r

Datasheet

1.EPC2010.pdf (5 pages)

Specifications of EPC9003

Design Resources

EPC9003 Gerber Files EPC9003 Bill of Materials

Featured Product

EPC Development Tools

Main Purpose

Power Management, Half H-Bridge Driver (External FET)

Embedded

Utilized Ic / Part

EPC2010

Primary Attributes

200V, 5A Max Output GaNFET Capability

Secondary Attributes

GaNFET Driver Circuit Uses 7 ~ 12V

Lead Free Status / Rohs Status

Contains lead / RoHS non-compliant

Other names

917-1012

Current page: 1 of 5
Download datasheet (2Mb)

eGaN® FET DATASHEET

EPC2010 – Enhancement Mode Power Transistor

Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leverag-

ing the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high elec-

tron mobility and low temperature coefficient allows very low R

and majority carrier diode provide exceptionally low Q

can handle tasks where very high switching frequency, and low on-time are beneficial as well as

those where on-state losses dominate.

Note 1: R

Static Characteristics (T

Source-Drain Characteristics (T

Dynamic Characteristics (T

DSS

DS(ON)

, 12 A

STG

See http://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.

, 200 V

DS(ON)

GS(TH)

DSS

GSS

is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.

OSS

RSS

, 25 mW

ISS

DSS

θ JC

θ JB

θ JA

Drain-to-Source Voltage

Continuous (T

Pulsed (25˚C, Tpulse = 300 µs)

Gate-to-Source Voltage

Operating Temperature

Storage Temperature

Gate-Source Forward Leakage

Source-Drain Forward Voltage

PARAMETER

Gate-Source Reverse Leakage

PARAMETER

Reverse Transfer Capacitance

Drain-Source On Resistance

Total Gate Charge (V

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Board

Thermal Resistance, Junction to Ambient (Note 1)

Drain-to-Source Voltage

Gate Threshold Voltage

Gate to Source Charge

Drain Source Leakage

Gate to Drain Charge

= 25˚C unless otherwise stated)

Output Capacitance

Input Capacitance

=25˚C, θ

= 25˚C unless otherwise stated)

= 13)

Maximum Ratings

PRELIMINARY

= 5 V)

and zero Q

= 0.5 A, V

DS(ON)

Thermal Characteristics

-40 to 125

-40 to 150

TEST CONDITIONS

= 0 V, I

= V

= 100 V, I

= 160 V, V

= 100 V, V

, while its lateral device structure

200

-5

= 5 V, I

. The end result is a device that

, I

= -5 V

= 0 V, T = 125˚C

= 5 V

= 0 V, T = 25˚C

= 200 µA

= 3 mA

= 6 A

= 12 A

= 0 V

˚C

MIN

200

MIN

0.7

EFFICIENT POWER CONVERSION

EPC2010 eGaN® FETs are supplied only in

passivated die form with solder bars

Applications

• High Speed DC-DC conversion

• Class D Audio

• Hard Switched and High Frequency Circuits

Benefits

• Ultra High Efficiency

• Ultra Low R

• Ultra low Q

• Ultra small footprint

TYP

480

270

0.2

1.4

1.8

1.7

1.3

1.8

TYP

DS(on)

MAX

150

2.5

7.5

2.6

HAL

˚C/W

EPC2010

| PAGE 1

UNIT

mΩ

µA

Related parts for EPC9003

EPC9003 Summary of contents

Page 1

... FR4 board. JA θ Q Total Gate Charge (V See http://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details Gate to Drain Charge GD EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2011 | Q Gate to Source Charge GS PRELIMINARY , while its lateral device structure DS(ON) and zero Q . The end result is a device that G ...

Page 2

... V – Drain to Source Voltage (V) DS Figure for Various Current DS(ON 2 – Gate to Source Voltage (V) GS EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2011 | 25˚ 0 125˚ TEST CONDITIONS V = 100 100 2 4.5 5 5.5 1.8 1.8 MIN ...

Page 3

... Figure 7: Reverse Drain-Source Characteristics 60 25˚C 125˚ 0.5 1 1.5 2 2.5 V – Source to Drain Voltage (V) SD Figure 9: Normalized Threshold Voltage vs Temperature - – Junction Temperature ( ˚ EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2011 | OSS ISS RSS 150 200 3 3.5 4 4.5 -20 .03 ...

Page 4

... Dimension (mm) c (note 2) f (note 2) DIE MARKINGS Die orientation dot Gate Pad solder bar is under this corner EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2011 | Normalized Maximum Transient Thermal Impedance Single Pulse Rectangular Pulse Duration, seconds ...

Page 5

... FET DATASHEET DIE OUTLINE f Solder Bar View Side View RECOMMENDED LAND PATTERN 1 (units in µm) 2 EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2011 | SEATING PLANE 600 600 X4 3554 250 250 X5 MICROMETERS DIM MIN Nominal A 3524 3554 7 B 1602 1632 ...

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