EPC9003 EPC, EPC9003 Datasheet - Page 2

• Manufacturer Part Number: EPC9003
• Description: BOARD DEV FOR EPC2010 200V GAN
• Manufacturer: EPC
• Series: -r

Specifications of EPC9003

• Design Resources: EPC9003 Gerber Files EPC9003 Bill of Materials
• Featured Product: EPC Development Tools
• Main Purpose: Power Management, Half H-Bridge Driver (External FET)
• Embedded: No
• Utilized Ic / Part: EPC2010
• Primary Attributes: 200V, 5A Max Output GaNFET Capability
• Secondary Attributes: GaNFET Driver Circuit Uses 7 ~ 12V
• Lead Free Status / Rohs Status: Contains lead / RoHS non-compliant
• Other names: 917-1012

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Dynamic Characteristics (T
60
50
40
30
20
10
60
50
40
30
20
10
0
0
0
Figure 1: Typical Output Characteristics
2
Figure 3: R
Q
C
C
Q
Q
Q
V
C
Q
OSS
RSS
OSS
SD
ISS
GD
GS
RR
G
V
V
V
V
GS
GS
GS
GS
2.5
0.5
= 5
= 4
= 3
= 2
I
I
I
I
D
D
D
D
= 10 A
= 40 A
= 60 A
= 20 A
DS(ON)
Source-Drain Recovery Charge
Source-Drain Forward Voltage
PARAMETER
Reverse Transfer Capacitance
V
Total Gate Charge (V
vs V
V
DS
3
GS
Gate to Source Charge
– Drain to Source Voltage (V)
Gate to Drain Charge
Output Capacitance
– Gate to Source Voltage (V)
1
G
Input Capacitance
for Various Current
J
Output Charge
= 25˚C unless otherwise stated)
3.5
1.5
4
GS
= 5 V)
2
4.5
2.5
I
S
I
5
S
= 0.5 A, V
= 0.5 A, V
V
V
DS
DS
TEST CONDITIONS
= 100 V, I
= 100 V, V
5.5
3
GS
GS
= 0 V, T = 125˚C
= 0 V, T = 25˚C
D
GS
= 12 A
= 0 V
60
50
40
30
20
10
0
2
Figure 2: Transfer Characteristics
Figure 4: R
V
0.5
DS
= 3 V
2.5
25˚C
125˚C
MIN
DS(ON)
0.5
V
vs V
V
3
GS
GS
– Gate to Source Voltage (V)
– Gate to Source Voltage (V)
1
G
for Various Temperature
TYP
480
270
1.8
1.8
1.7
1.3
11
40
5
3.5
0
2
2.5
4
MAX
7.5
2.6
50
3
2
4.5
3.5
5
EPC2010
| PAGE 2
UNIT
25˚C
125˚C
4
pF
nC
V
5.5
4.5