N25Q128A11BF840F Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC., N25Q128A11BF840F Datasheet - Page 170

• Manufacturer Part Number: N25Q128A11BF840F
• Description: IC SRL FLASH 128MB NMX 8-VDFPN
• Manufacturer: Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC.
• Series: Forté™r

Specifications of N25Q128A11BF840F

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 128M (16M x 8)
• Speed: 108MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 1.7 V ~ 2 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-VDFPN
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: N25Q128A11BF840F

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170/185
Initial delivery state
The device is delivered with the memory array erased: all bits are set to 1 (each byte
contains FFh). The Status Register contains 00h (all Status Register bits are 0).
Maximum rating
Stressing the device outside the ratings listed here may cause permanent damage to the
device. These are stress ratings only, and operation of the device at these, or any other
conditions outside those indicated in the operating sections of this specification, is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Table 28.
1. Compliant with JEDEC Std. J-STD-020C (for small body, Sn-Pb or Pb assembly), the Numonyx
2. Avoid applying VPP
3. JEDEC Std JESD22-A114A (C1 = 100 pF, R1 = 1500 Ω, R2 = 500 Ω).
Symbol
ECOPACK® 7191395 specification, and the European directive on Restrictions on Hazardous
Substances (RoHS) 2002/95/EU.
T
T
V
VPP
V
LEAD
V
STG
ESD
CC
IO
Absolute maximum ratings
Storage temperature
Lead temperature during soldering
Input and output voltage (with respect to ground)
Supply voltage
Fast program/erase voltage
Electrostatic discharge voltage (human body model)
H
to the W/VPP pin during Bulk Erase.
Parameter
(2)
(3)
–2000
–0.6
–0.6
–0.2
Min
–65
V
CC
see
2000
Max
10.0
150
4.0
+ 0.6
(1)
Unit
°C
°C
V
V
V
V