N25Q128A11BF840F Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC., N25Q128A11BF840F Datasheet - Page 160

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N25Q128A11BF840F

Manufacturer Part Number
N25Q128A11BF840F
Description
IC SRL FLASH 128MB NMX 8-VDFPN
Manufacturer
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC.
Series
Forté™r
Datasheet

Specifications of N25Q128A11BF840F

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
128M (16M x 8)
Speed
108MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
1.7 V ~ 2 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-VDFPN
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
N25Q128A11BF840F
9.3.26
160/185
S
C
DQ0
DQ1
DQ2
DQ3
Release from Deep Power-down (RDP)
Once the device has entered the Deep Power-down mode, all instructions are ignored
except the Release from Deep Power-down (RDP) instruction. Executing this instruction
takes the device out of the Deep Power-down mode. Apart form the parallelizing of the
instruction code on the two pins DQ0, DQ1, DQ2 and DQ3, the instruction functionality is
exactly the same as the Release from Deep-Power-down (RDP) instruction of the Extended
SPI protocol. The instruction sequence is shown in
Figure 101. Deep Power-down instruction sequence
Instruction
0
1
High Impedance
Deep power-down mode
t
RDP
Figure
Standby mode
101.
Quad_RDP

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