BUK7507-55B NXP Semiconductors, BUK7507-55B Datasheet - Page 9

• Manufacturer Part Number: BUK7507-55B
• Description: MOSFET Power HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK7507-55B

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0071 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 119 A
• Power Dissipation: 203 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK7507-55B,127

NXP Semiconductors
BUK7507-55B
Product data sheet
Fig 13. Gate-source voltage as a function of gate
Fig 15. Source current as a function of source-drain voltage; typical values
V
(V)
10
GS
8
6
4
2
0
charge; typical values
0
20
V
DD
= 14 (V)
40
100
(A)
I
V
75
50
25
S
0
DD
0.0
Q
= 44 (V)
All information provided in this document is subject to legal disclaimers.
G
(nC)
03nn59
60
T
j
Rev. 2 — 26 July 2011
= 175 °C
0.5
Fig 14. Input, output and reverse transfer capacitances
T
j
= 25 °C
1.0
4000
(pF)
3000
2000
1000
C
0
10
as a function of drain-source voltage; typical
values
V
-2
SD
N-channel TrenchMOS standard level FET
(V)
03nn58
1.5
10
-1
BUK7507-55B
1
C
C
C
ISS
OSS
RSS
10
© NXP B.V. 2011. All rights reserved.
V
DS
03nn65
(V)
10
2
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