PSMN3R5-80PS,127 NXP Semiconductors, PSMN3R5-80PS,127 Datasheet - Page 8
![MOSFET Power N-Ch 80V 3.5 mOhms](/photos/16/7/160729/to220ab_sml.jpg)
PSMN3R5-80PS,127
Manufacturer Part Number
PSMN3R5-80PS,127
Description
MOSFET Power N-Ch 80V 3.5 mOhms
Manufacturer
NXP Semiconductors
Series
-r
Datasheet
1.PSMN3R5-80PS127.pdf
(15 pages)
Specifications of PSMN3R5-80PS,127
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.5 mOhms
Drain-source Breakdown Voltage
80 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
120 A
Power Dissipation
338 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220AB
Gate Charge Qg
135 nC
Minimum Operating Temperature
- 55 C
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.5 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
80V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
139nC @ 10V
Input Capacitance (ciss) @ Vds
9961pF @ 40V
Power - Max
338W
Mounting Type
Through Hole
Lead Free Status / Rohs Status
Details
Other names
934065169127
NXP Semiconductors
PSMN3R5-80PS
Product data sheet
Fig 9.
Fig 11. Sub-threshold drain current as a function of
(A)
(A)
I
10
10
10
10
10
10
I
D
D
160
120
80
40
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
0
0
10
0.5
8
6
2
min
5.5
1
5
typ
4
V
GS
1.5
max
V
(V) = 4
All information provided in this document is subject to legal disclaimers.
GS
V
003aad685
DS
(V)
03aa35
4.5
(V)
2
6
Rev. 03 — 19 April 2011
N-channel 80 V, 3.5 mΩ standard level MOSFET in TO-220
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normailzed drain-source on-state resistance
V
GS(th)
(V)
2.4
1.8
1.2
0.6
a
5
4
3
2
1
0
3
0
−60
-60
junction temperature
factor as a function of junction temperature
0
0
PSMN3R5-80PS
60
60
max
min
typ
120
120
© NXP B.V. 2011. All rights reserved.
T
003aad280
T
003aaf608
j
j
(°C)
( ° C)
180
180
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