PSMN3R5-80PS,127 NXP Semiconductors, PSMN3R5-80PS,127 Datasheet - Page 5

• Manufacturer Part Number: PSMN3R5-80PS,127
• Description: MOSFET Power N-Ch 80V 3.5 mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN3R5-80PS,127

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.5 mOhms
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 338 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Gate Charge Qg: 135 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 139nC @ 10V
• Input Capacitance (ciss) @ Vds: 9961pF @ 40V
• Power - Max: 338W
• Mounting Type: Through Hole
• Lead Free Status / Rohs Status: Details
• Other names: 934065169127

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN3R5-80PS
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Z
(K/W)
th(j-mb)
10
10
10
-1
-2
-3
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
-6
δ = 0.5
Thermal characteristics
0.05
0.02
0.2
0.1
single shot
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
10
-5
All information provided in this document is subject to legal disclaimers.
10
-4
Rev. 03 — 19 April 2011
N-channel 80 V, 3.5 mΩ standard level MOSFET in TO-220
10
Conditions
see
Vertical in free air
-3
Figure 4
10
-2
PSMN3R5-80PS
Min
-
-
10
P
-1
Typ
0.22
60
tp
T
t
p (s)
© NXP B.V. 2011. All rights reserved.
003aaf613
δ =
Max
0.44
-
tp
T
t
1
Unit
K/W
K/W
5 of 15