PSMN3R5-80ES,127 NXP Semiconductors, PSMN3R5-80ES,127 Datasheet - Page 12

• Manufacturer Part Number: PSMN3R5-80ES,127
• Description: MOSFET Power N-Ch 80V 3.5 mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN3R5-80ES,127

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.5 mOhms
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 338 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: I2PAK
• Gate Charge Qg: 135 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 139nC @ 10V
• Input Capacitance (ciss) @ Vds: 9961pF @ 40V
• Power - Max: 338W
• Mounting Type: Through Hole
• Lead Free Status / Rohs Status: Details
• Other names: 934065163127

NXP Semiconductors
8. Revision history
Table 7.
PSMN3R5-80ES
Product data sheet
Document ID
PSMN3R5-80ES v.2
Modifications:
PSMN3R5-80ES v.1
Revision history
20110419
20101224
Release date
•
•
Status changed from objective to product.
Various changes to content.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Objective data sheet
Rev. 02 — 19 April 2011
N-channel 80 V, 3.5 mΩ standard level MOSFET in I2PAK
Change notice
-
-
PSMN3R5-80ES
Supersedes
PSMN3R5-80ES v.1
-
© NXP B.V. 2011. All rights reserved.
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