BUK9Y12-55B NXP Semiconductors, BUK9Y12-55B Datasheet - Page 9

• Manufacturer Part Number: BUK9Y12-55B
• Description: MOSFET, N CH, 55V, 61.8A, LFPAK
• Manufacturer: NXP Semiconductors

Specifications of BUK9Y12-55B

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 61.8A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 0.0081ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.65V
• Rohs Compliant: Yes

NXP Semiconductors
BUK9Y12-55B
Product data sheet
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
V
(V)
GS
5
4
3
2
1
0
charge; typical values.
0
V
DS
10
= 14V
20
V
DS
(A)
I
= 44V
S
60
40
20
30
0
0
All information provided in this document is subject to legal disclaimers.
Q
003aac882
G
(nC)
0.2
40
Rev. 04 — 7 April 2010
T
j
= 175 °C
0.4
Fig 15. Input, output and reverse transfer capacitances
0.6
(pF)
10
C
10
10
4
3
2
10
as a function of drain-source voltage; typical
values.
T
0.8
-1
j
003aac883
= 25 °C
V
SD
(V)
N-channel TrenchMOS logic level FET
1
1
BUK9Y12-55B
10
© NXP B.V. 2010. All rights reserved.
V
C
DS
003aac884
C
C
oss
iss
rss
(V)
10
2
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