BUK9Y12-55B NXP Semiconductors, BUK9Y12-55B Datasheet
BUK9Y12-55B
Specifications of BUK9Y12-55B
Related parts for BUK9Y12-55B
BUK9Y12-55B Summary of contents
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... BUK9Y12-55B N-channel TrenchMOS logic level FET Rev. 04 — 7 April 2010 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
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... Figure 14 Simplified outline SOT669 (LFPAK) Description plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y12-55B N-channel TrenchMOS logic level FET Min ≤ sup = °C; see j Graphic symbol G mbb076 ...
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... Figure °C mb ≤ 10 µs; pulsed ° ≤ Ω 61 sup °C; unclamped GS j(init) see Figure 3 All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y12-55B N-channel TrenchMOS logic level FET Min Typ Max - - - 61 43 247 - - 106 ...
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... T (°C) mb Fig ( All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y12-55B N-channel TrenchMOS logic level FET 120 100 150 Normalized total power dissipation as a function of mounting base temperature 003aac486 (1) (2) ( (ms) AL 03na19 200 T (°C) mb © ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration. BUK9Y12-55B Product data sheet = 10 μ 100 μ 100 ms 10 Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y12-55B N-channel TrenchMOS logic level FET 003aad475 (V) DS Min Typ Max - - 1.42 003aac479 t p δ ...
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... Figure 1.5 Ω Ω °C G(ext ° see Figure /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y12-55B N-channel TrenchMOS logic level FET Min Typ Max 2.45 1.25 1.65 2.15 0 500 - 0. 100 - 2 100 - - 13 - 8.1 ...
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... V ( (V) DS Fig 7. 003aac885 R (mΩ (A) D Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y12-55B N-channel TrenchMOS logic level FET ( 175 ° Transfer characteristics: drain current as a function of gate-source voltage; typical values. 40 3.5 4 DSon V ( ...
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... V (V) GS Fig 13. Normalized drain-source on-state resistance factor as a function of junction temperature. All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y12-55B N-channel TrenchMOS logic level FET 003aad565 min typ max 003aad696 0 60 120 T © NXP B.V. 2010. All rights reserved. ...
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... V = 44V (nC) G Fig 15. Input, output and reverse transfer capacitances ( 175 ° 0.2 0.4 0.6 All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y12-55B N-channel TrenchMOS logic level FET (pF function of drain-source voltage; typical values. 003aac883 = 25 ° 0 (V) SD 003aac884 ...
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... D max 4.41 2.2 0.9 0.25 0.30 4.10 4.20 3.62 2.0 0.7 0.19 0.24 3.80 REFERENCES JEDEC JEITA MO-235 All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y12-55B N-channel TrenchMOS logic level FET detail (1) (1) ( 5.0 3.3 6.2 ...
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... Product data sheet Data sheet status Change notice Product data sheet - Objective data sheet - All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y12-55B N-channel TrenchMOS logic level FET Supersedes BUK9Y12-55B_3 BUK9Y12-55B_2 © NXP B.V. 2010. All rights reserved ...
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... All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y12-55B N-channel TrenchMOS logic level FET © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y12-55B N-channel TrenchMOS logic level FET © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 7 April 2010 Document identifier: BUK9Y12-55B ...