BUK9Y12-55B NXP Semiconductors, BUK9Y12-55B Datasheet - Page 3

• Manufacturer Part Number: BUK9Y12-55B
• Description: MOSFET, N CH, 55V, 61.8A, LFPAK
• Manufacturer: NXP Semiconductors

Specifications of BUK9Y12-55B

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 61.8A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 0.0081ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.65V
• Rohs Compliant: Yes

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
BUK9Y12-55B
Product data sheet
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
E
D
DM
S
SM
stg
j
DS
DGR
GS
tot
DS(AL)S
DS(AL)R
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
Repetitive avalanche rating limited by average junction temperature of 170 °C.
Refer to application note AN10273 for further information.
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive
drain-source
avalanche energy
repetitive drain-source
avalanche energy
Conditions
T
R
T
see
T
T
see
T
T
t
I
V
see
All information provided in this document is subject to legal disclaimers.
p
D
j
mb
mb
mb
mb
mb
GS
GS
≤ 10 µs; pulsed; T
≥ 25 °C; T
= 61.8 A; V
Figure 4
Figure 4
Figure 3
= 25 °C; V
= 100 °C; V
= 25 °C; t
= 25 °C; see
= 25 °C
= 5 V; T
= 20 kΩ
Rev. 04 — 7 April 2010
j(init)
j
≤ 175 °C
sup
p
GS
≤ 10 µs; pulsed;
GS
= 25 °C; unclamped
≤ 55 V; R
Figure 2
= 5 V; see
= 5 V; see
mb
= 25 °C
GS
Figure
= 50 Ω;
Figure 1
1;
N-channel TrenchMOS logic level FET
[1][2][3]
BUK9Y12-55B
Min
-
-
-15
-
-
-
-
-55
-55
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
© NXP B.V. 2010. All rights reserved.
175
Max
55
55
15
61.8
43.8
247
106
175
61.8
247
129
-
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
J
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