DSPIC30F5015-30I/PT Microchip Technology Inc., DSPIC30F5015-30I/PT Datasheet - Page 57

• Manufacturer Part Number: DSPIC30F5015-30I/PT
• Description: DSP, 16-Bit, 66 KB Flash, 2KB RAM, 52 I/O, TQFP-64
• Manufacturer: Microchip Technology Inc.
• Type: DSPr

Specifications of DSPIC30F5015-30I/PT

• A/d Inputs: 16-Channels, 10-Bit
• Cpu Speed: 30 MIPS
• Eeprom Memory: 1K Bytes
• Input Output: 52
• Interface: CAN, I2C, SPI, UART/USART
• Ios: 52
• Memory Type: Flash
• Number Of Bits: 16
• Package Type: 64-pin TQFP
• Programmable Memory: 66K Bytes
• Ram Size: 2K Bytes
• Timers: 5-16-bit, 2-32-bit
• Voltage, Range: 2.5-5.5
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

7.0
The data EEPROM memory is readable and writable
during normal operation over the entire V
data EEPROM memory is directly mapped in the
program memory address space.
The four SFRs used to read and write the program
Flash memory are used to access data EEPROM
memory, as well. As described in Section 4.0
“Address Generator Units”, these registers are:
• NVMCON
• NVMADR
• NVMADRU
• NVMKEY
The EEPROM data memory allows read and write of
single words and 16-word blocks. When interfacing to
data memory, NVMADR, in conjunction with the
NVMADRU register, is used to address the EEPROM
location being accessed. TBLRDL and TBLWTL instruc-
tions are used to read and write data EEPROM. The
dsPIC30F6010 device has 8 Kbytes (4K words) of data
EEPROM, with an address range from 0x7FF000 to
0x7FFFFE.
A word write operation should be preceded by an erase
of the corresponding memory location(s). The write
typically requires 2 ms to complete, but the write time
will vary with voltage and temperature.
© 2007 Microchip Technology Inc.
Note: This data sheet summarizes features of this
group of dsPIC30F devices and is not intended to be
a complete reference source. For more information
on the CPU, peripherals, register descriptions and
general device functionality, refer to the “dsPIC30F
Family Reference Manual” (DS70046). For more
information on the device instruction set and pro-
gramming, refer to the “dsPIC30F/33F
Programmer’s Reference Manual” (DS70157).
DATA EEPROM MEMORY
DD
range. The
A program or erase operation on the data EEPROM
does not stop the instruction flow. The user is respon-
sible for waiting for the appropriate duration of time
before initiating another data EEPROM write/erase
operation. Attempting to read the data EEPROM while
a programming or erase operation is in progress results
in unspecified data.
Control bit WR initiates write operations, similar to pro-
gram Flash writes. This bit cannot be cleared, only set,
in software. This bit is cleared in hardware at the com-
pletion of the write operation. The inability to clear the
WR bit in software prevents the accidental or
premature termination of a write operation.
The WREN bit, when set, will allow a write operation.
On power-up, the WREN bit is clear. The WRERR bit is
set when a write operation is interrupted by a MCLR
Reset, or a WDT Time-out Reset, during normal oper-
ation. In these situations, following Reset, the user can
check the WRERR bit and rewrite the location. The
address register NVMADR remains unchanged.
7.1
A TBLRD instruction reads a word at the current pro-
gram word address. This example uses W0 as a
pointer to data EEPROM. The result is placed in
register W4, as shown in Example 7-1.
EXAMPLE 7-1:
MOV
MOV
MOV
TBLRDL [ W0 ], W4
Note:
dsPIC30F5015/5016
Reading the Data EEPROM
#LOW_ADDR_WORD,W0
#HIGH_ADDR_WORD,W1
W1
Interrupt flag bit NVMIF in the IFS0 regis-
ter is set when write is complete. It must be
cleared in software.
,
TBLPAG
DATA EEPROM READ
; Init Pointer
; read data EEPROM
DS70149C-page 55