SUD23N06-31L-E3 Siliconix / Vishay, SUD23N06-31L-E3 Datasheet - Page 5

• Manufacturer Part Number: SUD23N06-31L-E3
• Description: N-CH 60-V (D-S) 175 C MOSFET LOGIC
• Manufacturer: Siliconix / Vishay

Specifications of SUD23N06-31L-E3

• Channel Type: N
• Current, Drain: 19.5 A
• Fall Time: 40 ns
• Gate Charge, Total: 17 nC
• Operating And Storage Temperature: –55 to +175 °C
• Package Type: TO-252
• Polarization: N-Channel
• Power Dissipation: 100 W
• Resistance, Drain To Source On: 0.045 Ohm
• Resistance, Thermal, Junction To Case: 4 °C/W
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: –55 °C
• Thermal Resistance, Junction To Ambient: 52 °C/W
• Time, Rise: 25 ns
• Time, Turn-off Delay: 45 ns
• Time, Turn-on Delay: 15 ns
• Transconductance, Forward: 20 S
• Voltage, Breakdown, Drain To Source: 60 V
• Voltage, Diode Forward: 1.5 V
• Voltage, Drain To Source: 60 V
• Voltage, Forward, Diode: 1.5 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

THERMAL RATINGS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see
Document Number: 72145
S-71660-Rev. C, 06-Aug-07
http://www.vishay.com/ppg?72145.
25
20
15
10
5
0
0.01 10 -
0.1
0
2
1
25
4
Duty Cycle = 0.5
0.2
0.1
Single Pulse
T
0.02
vs. Ambient Temperature
A
Maximum Drain Current
0.05
50
- Ambient Temperature (°C)
75
10 -
100
3
Normalized Thermal Transient Impedance, Junction-to-Case
125
150
175
Square Wave Pulse Duration (sec)
10 -
2
100
0.1
10
1
0.1
10 -
*V
*r
1
DS(on)
GS
> minimum V
V
Limited
DS
Single Pulse
T
- Drain-to-Source Voltage (V)
C
Safe Operating Area
1
= 25 °C
GS
SUD23N06-31L
at which r
1
Vishay Siliconix
DS(on)
10
is specified
www.vishay.com
10
10 µs
100 µs
1 ms
10 ms
100 ms
dc
100
5