SUD23N06-31L-E3 Siliconix / Vishay, SUD23N06-31L-E3 Datasheet - Page 4

• Manufacturer Part Number: SUD23N06-31L-E3
• Description: N-CH 60-V (D-S) 175 C MOSFET LOGIC
• Manufacturer: Siliconix / Vishay

Specifications of SUD23N06-31L-E3

• Channel Type: N
• Current, Drain: 19.5 A
• Fall Time: 40 ns
• Gate Charge, Total: 17 nC
• Operating And Storage Temperature: –55 to +175 °C
• Package Type: TO-252
• Polarization: N-Channel
• Power Dissipation: 100 W
• Resistance, Drain To Source On: 0.045 Ohm
• Resistance, Thermal, Junction To Case: 4 °C/W
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: –55 °C
• Thermal Resistance, Junction To Ambient: 52 °C/W
• Time, Rise: 25 ns
• Time, Turn-off Delay: 45 ns
• Time, Turn-on Delay: 15 ns
• Transconductance, Forward: 20 S
• Voltage, Breakdown, Drain To Source: 60 V
• Voltage, Diode Forward: 1.5 V
• Voltage, Drain To Source: 60 V
• Voltage, Forward, Diode: 1.5 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

SUD23N06-31L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C unless noted
www.vishay.com
4
2.5
2.0
1.5
1.0
0.5
0.0
- 50 - 25
On-Resistance vs. Junction Temperature
V
I
D
GS
= 15 A
= 10 V
T
0
J
- Junction T emperature ( °C)
25
50
75
100
125
150
175
100
10
1
0
Source-Drain Diode Forward Voltage
0.3
V
SD
T
J
= 150 °C
- Source-to-Drain Voltage (V)
0.6
S-71660-Rev. C, 06-Aug-07
Document Number: 72145
0.9
T
J
= 25 °C
1.2
1.5