SUD23N06-31L-E3 Siliconix / Vishay, SUD23N06-31L-E3 Datasheet - Page 3

• Manufacturer Part Number: SUD23N06-31L-E3
• Description: N-CH 60-V (D-S) 175 C MOSFET LOGIC
• Manufacturer: Siliconix / Vishay

Specifications of SUD23N06-31L-E3

• Channel Type: N
• Current, Drain: 19.5 A
• Fall Time: 40 ns
• Gate Charge, Total: 17 nC
• Operating And Storage Temperature: –55 to +175 °C
• Package Type: TO-252
• Polarization: N-Channel
• Power Dissipation: 100 W
• Resistance, Drain To Source On: 0.045 Ohm
• Resistance, Thermal, Junction To Case: 4 °C/W
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: –55 °C
• Thermal Resistance, Junction To Ambient: 52 °C/W
• Time, Rise: 25 ns
• Time, Turn-off Delay: 45 ns
• Time, Turn-on Delay: 15 ns
• Transconductance, Forward: 20 S
• Voltage, Breakdown, Drain To Source: 60 V
• Voltage, Diode Forward: 1.5 V
• Voltage, Drain To Source: 60 V
• Voltage, Forward, Diode: 1.5 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

TYPICAL CHARACTERISTICS 25 °C unless noted
Document Number: 72145
S-71660-Rev. C, 06-Aug-07
1000
800
600
400
200
32
24
16
50
40
30
20
10
0
8
0
0
0
0
0
C
rss
T
C
= - 55 °C
10
5
2
V
V
DS
V
DS
GS
Output Characteristics
- Drain-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
Transconductance
I
= 10 thru 6 V
D
20
- Drain Current (A)
Capacitance
10
4
30
C
oss
15
6
C
40
iss
20
4 V
3 V
8
5 V
125 °C
50
25 °C
10
25
60
0.10
0.08
0.06
0.04
0.02
0.00
10
50
40
30
20
10
8
6
4
2
0
0
0
0
0
V
I
D
DS
V
= 23 A
GS
On-Resistance vs. Drain Current
= 30 V
2
1
10
V
= 4.5 V
GS
Transfer Characteristics
Q
g
T
- Gate-to-Source Voltage (V)
I
- Total Gate Charge (nC)
C
25 °C
D
4
2
= 125 °C
- Drain Current (A)
Gate Charge
20
SUD23N06-31L
6
Vishay Siliconix
3
30
8
- 55 °C
4
V
www.vishay.com
GS
= 10 V
40
10
5
12
50
6
3