SUD23N06-31_08 VISHAY [Vishay Siliconix], SUD23N06-31_08 Datasheet

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SUD23N06-31_08

Manufacturer Part Number
SUD23N06-31_08
Description
N-Channel 60-V (D-S), MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
Notes:
a. Surface mounted on 1" x 1" FR4 board.
Document Number: 68857
S-81948-Rev. A, 25-Aug-08
Ordering Information: SUD23N06-31-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case
PRODUCT SUMMARY
V
DS
60
(V)
G
Top View
TO-252
D
0.045 at V
0.031 at V
S
R
Drain Connected to Tab
DS(on)
GS
GS
J
(Ω)
= 4.5 V
= 150 °C)
= 10 V
b
N-Channel 60-V (D-S), MOSFET
I
D
9.1
7.6
(A)
a
A
= 25 °C, unless otherwise noted
Q
Steady State
6.5 nC
g
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
(Typ.)
C
C
A
A
C
A
C
C
A
A
t ≤ 10 s
New Product
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free
• TrenchFET
• 100 % R
• DC/DC Converters
Symbol
Symbol
T
R
R
J
V
V
E
I
I
P
, T
DM
I
I
AS
thJC
thJA
GS
DS
AS
D
S
D
stg
g
and UIS Tested
®
Power MOSFET
Typical
3.2
18
G
N-Channel MOSFET
- 55 to 150
31.25
Limit
± 20
21.4
17.1
20.8
9.1
7.6
3.8
5.7
3.6
60
50
20
20
20
a
a
a
a
a
D
S
Maximum
SUD23N06-31
4.0
22
Vishay Siliconix
www.vishay.com
°C/W
Unit
Unit
°C
W
mJ
V
A
RoHS
COMPLIANT
1

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SUD23N06-31_08 Summary of contents

Page 1

... TO-252 Drain Connected to Tab Top View Ordering Information: SUD23N06-31-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current ...

Page 2

... SUD23N06-31 Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... New Product 0.10 0.08 25 °C 125 °C 0.06 0.04 0.02 0. SUD23N06-31 Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics ...

Page 4

... SUD23N06-31 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1.8 1.5 1.2 0.9 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature 0.08 0.06 0.04 0.02 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 500 400 300 200 100 0.01 0.1 Time (s) Single Pulse Power, Junction-to-Ambient www ...

Page 5

... T - Case Temperature (°C) C Current Derating*, Junction-to-Case 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper SUD23N06-31 Vishay Siliconix 125 150 100 125 T - Ambient Temperature (°C) A Power, Junction-to-Ambient www.vishay.com 150 5 ...

Page 6

... SUD23N06-31 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0. Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...

Page 7

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

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